CM800DY-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT www.pwrx.com S-Series Module 800 Amperes/1200 Volts A B F E G H J D E M K N B F R P X X X N Q Description: U NUTS (3 PLACES) Powerex Dual IGBT Modules are designed for use in switching L T (4 PLACES) V NUTS (4 PLACES) applications. Each module consists AB AC of two IGBT Transistors in a Y W half-bridge configuration with each C AA transistor having a reverse- connected super-fast recovery S Z free-wheel diode. All components G2 and interconnects are isolated from E2 Di1 Tr2 the heat sinking baseplate, offering E2 C2E1 C1 Tr1 simplified system assembly and Di2 E1 thermal management. G1 Features: Outline Drawing and Circuit Diagram Low Drive Power Low V CE(sat) Dimensions Inches Millimeters Dimensions Inches Millimeters Discrete Super-Fast Recovery A 5.51 140.0 Q 2.56 65.0 Free-Wheel Diode B 5.12 130.0 R 0.79 20.0 Isolated Baseplate for Easy C 1.38+0.04/-0.02 35.0+1.0/-0.5 S 0.32 8.0 Heat Sinking D 0.45 11.5 T 0.26 Dia. 6.5 Dia. Applications: E 0.39 10.0 U M8 Metric M8 AC Motor Control F 4.330.001 110.00.25 V M4 Metric M4 Motion/Servo Control G 0.54 13.8 W 0.51 13.0 UPS Welding Power Supplies H 1.42 36.0 X 1.02 26.0 Laser Power Supplies J 1.72 43.8 Y 0.36 9.3 K 0.35 9.0 Z 0.16 4.0 Ordering Information: Example: Select the complete L 0.59 15.0 AA 0.96+0.04/-0.02 24.5+1.0/-0.5 module number you desire from M 0.80 20.4 AB 0.15 3.9 the table - i.e. CM800DY-24S is a N 0.57 14.5 AC 0.27 6.9 1200V (V ), 800 Ampere Dual CES P 1.57 40.0 IGBT Power Module. Current Rating V CES Type Amperes Volts (x 50) CM 800 24 02/14 Rev. 1 1 C2E1 E2 C1 G1 E1 E2 G2 LABELPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM800DY-24S Dual IGBT S-Series Module 800 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Characteristics Symbol Rating Units Collector-Emitter Voltage (G-E Short-Circuited) V 1200 Volts CES Gate-Emitter Voltage (C-E Short-Circuited) V 20 Volts GES *2,*4 Collector Current (DC, T = 117C) I 790 Amperes C C *3 Collector Current (Pulse, Repetitive) I 1600 Amperes CRM *2,*4 Total Power Dissipation (T = 25C) P 5355 Watts C tot *2 *1 Emitter Current I 790 Amperes E *3 *1 Emitter Current (Pulse, Repetitive) I 1600 Amperes ERM Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V 2500 Volts ISO Maximum Junction Temperature, Instantaneous Event (Overload) T 175 C j(max) *4 Case Temperature T 125 C C(max) Operating Junction Temperature, Continuous Operation (Under Switching) T -40 ~ +150 C j(opr) Storage Temperature T -40 ~ +125 C stg *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (T ) should not increase beyond maximum junction j temperature (T ) rating. j(max) 100.9 Tr2 Di2 Di2 Tr2 *3 Pulse width and repetition rate should be such that device junction temperature (T ) j does not exceed T rating. Tr2 Di2 Di2 Tr2 j(max) 87.1 *4 Case temperature (T ) and heatsink temperature (T ) is measured on the surface C s (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 42.9 Tr1 Di1 Di1 Tr1 Tr1 Di1 Di1 Tr1 29.1 0 0 28.8 97.2 42 84 2 02/14 Rev. 1