MDI300-12A4 IXYS

MII 300-12A4 MID 300-12A4 MDI 300-12A4 I = 330 A C25 IGBT Modules V = 1200 V CES Short Circuit SOA Capability V = 2.2 V CE(sat) typ. Square RBSOA MII 300-12A4 MID 300-12A4 MDI 300-12A4 11 10 3 3 3 9 T1 T1 8 D1 D1 D11 3 8 2 8 1 1 9 1 1 9 T2 T2 D2 D12 D2 11 11 E72873 10 2 10 2 2 Features IGBTs T1 - T2 NPT IGBT technology Symbol Conditions Maximum Ratings low switching losses V T = 25C to 150C 1200 V CES VJ switching frequency up to 30 kHz square RBSOA, no latch up V 20 V GES high shor t circuit capability I T = 25C 330 A C25 C positive temperature coefficient for I T = 80C 220 A C80 C easy parallelling MOS input, voltage controlled I V = 15 V R = 3.3 T = 125C 400 A CM GE G VJ ultra fast free wheeling diodes V RBSOA Clamped inductive load L = 100 H V CEK CES package with DCB ceramic base plate t V = V V = 15 V R = 3.3 10 s SC CE CES GE G isolation voltage 4800 V (SCSOA) T = 125C non-repetitive VJ UL registered E72873 P T = 25C 1380 W tot C Advantages Symbol Conditions Characteristic Values space and weight savings (T = 25C, unless otherwise specified) VJ reduced protection circuits min. typ. max. Applications V I = 200 A V = 15 V 2.2 2.7 V CE(sat) C GE AC and DC motor control V I = 8 mA V = V 4.5 6.5 V GE(th) C GE CE AC ser vo and robot dr ives power supplies I V = V V = 0 V T = 25C 13 mA CES CE CES GE VJ welding inver ters T = 125C 20 mA VJ I V = 0 V V = 20 V 800 nA GES CE GE t 100 ns d(on) t 60 ns r Inductive load T = 125C VJ t 600 ns d(off) V = 600 V I = 200 A CE C t 90 ns f V = 15 V R = 3.3 GE G E 32 mJ on E 29 mJ off C 13 nF ies C V = 25 V V = 0 V f = 1 MHz 2 nF oes CE GE C 1 nF res R (per IGBT) 0.09 K/W thJC R with heatsink compound 0.18 K/W thJH IXYS reserves the right to change limits, test conditions and dimensions. 20090812a 2009 IXYS All rights reserved 1 - 4MII 300-12A4 MID 300-12A4 MDI 300-12A4 Free wheeling diodes D1 - D2 / D11 - D12 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction I T = 25C 450 A F25 C I T = 80C 280 A F80 C I R Symbol Conditions Characteristic Values 0 V min. typ. max. 0 V I = 300 A V = 0 V T = 25C 2.2 2.5 V F F GE VJ IGBT (typ. at V = 15 V T = 125C) GE J T = 125C 1.7 V VJ V = 1.3 V R = 6.2 m 0 0 I I = 200 A di /dt = -1800 A/s 180 A RM F F t V = 600 V V = 0 V T = 125C 200 ns rr R GE VJ Free wheeling diode (typ. at T = 125C) J V = 1.3 V R = 2.4 m R (per IGBT) 0.15 K/W 0 0 thJC R with heatsink compound 0.3 K/W thJH Module Symbol Conditions Maximum Ratings T operating -40...+150 C VJ T -40...+150 C stg V I < 1 mA 50/60 Hz 4000 V~ ISO ISOL M Mounting torque (module, M6) 2.25 - 2.75 Nm d (ter minal, M5) 2.5 - 3.7 Nm Symbol Conditions Characteristic Values min. typ. max. d Creepage distance on surface 10 mm S 9.6 d Str ike distance in air mm A Weight 250 g Dimensions in mm (1 mm = 0.0394 ) IXYS reserves the right to change limits, test conditions and dimensions. 20090812a 2009 IXYS All rights reserved 2 - 4