Power Module 1200V 40A IGBT Module RoHS MG1240H-XBN2MM Features High level of F ree wheeling diodes integrationonly one with fast and soft reverse power semiconductor recovery module required for the Industry standard package whole drive with insulated copper L ow saturation voltage base plateand soldering and positive temperature pins for PCB mounting coefficient T emperature sense F ast switching and short included tail current Applications AC motor control In verter and power supplies Motion/ser vo control Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 M Mounting Torque Recommended (M5) 2.5 5 Nm d Weight 180 g Inverter Sector Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 55 A C I DC Collector Current C T =80C 40 A C I Repetitive Peak Collector Current t =1ms 80 A CM p P Power Dissipation Per IGBT 195 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J 55 A T =25C C I Average Forward Current F(AV) T =80C 40 A C I Repetitive Peak Forward Current t =1ms 80 A FRM p 2 2 I t T =125C, t=10ms, V =0V 300 A s J R MG1240H-XBN2MM 2016 Littelfuse, Inc 1 217 Specifications are subject to change without notice. Revised:10/05/16Power Module 1200V 40A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =1.5mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =40A, V =15V, T =25C 1.8 V C GE J V CE(sat) Saturation Voltage I =40A, V =15V, T =125C 2.05 V C GE J V =1200V, V =0V, T =25C 0.25 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 2 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 6.0 Gint Q Gate Charge V =600V, I =40A , V =15V 0.33 C ge CE C GE C Input Capacitance 2.5 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.11 nF res T=25C 90 ns J t Turn - on Delay Time d(on) T =125C 90 ns J T=25C 30 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 420 ns J I =40A t Turn - off Delay Time C d(off) T =125C 520 ns J R =27 G T=25C 70 ns J t Fall Time V =15V f GE T =125C 90 ns J Inductive Load T=25C 4.1 mJ J E Turn - on Energy on T =125C 5.8 mJ J T=25C 3.6 mJ J E Turn - off Energy off T =125C 4.2 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 160 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.64 K/W thJC Diode I =40A, V =0V, T =25C 1.80 V F GE J V Forward Voltage F I =40A, V =0V, T =125C 1.85 V F GE J t Reverse Recovery Time 240 ns RR I =40A, V =600V F R I Max. Reverse Recovery Current di /dt=-400A/s 35 A RRM F T =125C E Reverse Recovery Energy J 2.8 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 1.0 K/W thJCD MG1240H-XBN2MM 2016 Littelfuse, Inc 2 218 Specifications are subject to change without notice. Revised:10/05/16