Preliminary Datasheet RJH60D6DPK R07DS0164EJ0400 600V - 40A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V = 1.6 V typ. (at I = 40 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching t = 50 ns typ. (at V = 300 V, V = 15 V, I = 40 A, Rg = 5 , Ta = 25C, inductive load) f CC GE C Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage V / V 600 V CES R Gate to emitter voltage V 30 V GES Collector current Tc = 25C I 80 A C Tc = 100C I 40 A C Note1 Collector peak current ic(peak) 160 A Collector to emitter diode forward current i 30 A DF Note1 Collector to emitter diode forward peak current i (peak) 120 A DF Note2 Collector dissipation P 260 W C Note2 Junction to case thermal resistance (IGBT) j-c 0.48 C/ W Note2 Junction to case thermal resistance (Diode) j-cd 2.10 C/ W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0164EJ0400 Rev.4.00 Page 1 of 9 Apr 19, 2012 RJH60D6DPK Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown V 600 V I =10 A, V = 0 BR(CES) C GE voltage Zero gate voltage collector current I / I 5 A V = 600 V, V = 0 CES R CE GE / Diode reverse current Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4.0 6.0 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.6 2.2 V I = 40 A, V = 15 V CE(sat) C GE Note3 V 1.8 V I = 80 A, V = 15 V CE(sat) C GE Input capacitance Cies 2500 pF V = 25 V CE V = 0 Output capacitance Coes 150 pF GE f = 1 MHz Reveres transfer capacitance Cres 70 pF Total gate charge Qg 104 nC V = 15 V GE V = 300 V CE Gate to emitter charge Qge 15 nC I = 40 A C Gate to collector charge Qgc 45 nC Turn-on delay time t 50 ns V = 300 V d(on) CC V = 15 V Rise time t 38 ns GE r I = 40 A C Turn-off delay time t 160 ns d(off) Rg = 5 Fall time t 50 ns f (Inductive load) Turn-on energy E 0.85 mJ on Turn-off energy E 0.60 mJ off Total switching energy E 1.45 mJ total Short circuit withstand time t 3.0 5.0 s V 360 V, V = 15 V sc CC GE Note3 FRD forward voltage V 1.4 1.9 V I = 30 A F F FRD reverse recovery time t 100 ns I = 30 A rr F di /dt = 100 A/ s FRD reverse recovery charge Q 0.18 C F rr FRD peak reverse recovery current I 4.2 A rr Notes: 3. Pulse test. R07DS0164EJ0400 Rev.4.00 Page 2 of 9 Apr 19, 2012