X-On Electronics has gained recognition as a prominent supplier of RJH60D6DPK-00#T0 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RJH60D6DPK-00#T0 IGBT Transistors are a product manufactured by Renesas. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RJH60D6DPK-00#T0 Renesas

RJH60D6DPK-00#T0 electronic component of Renesas
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See Product Specifications
Part No.RJH60D6DPK-00#T0
Manufacturer: Renesas
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3P Tube
Datasheet: RJH60D6DPK-00#T0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
50: USD 0.9687 ea
Line Total: USD 48.44 
Availability - 0
MOQ: 50  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Fri. 22 Nov

Multiples : 1

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 50
Multiples : 1
50 : USD 0.9687

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Continuous Collector Current at 25 C
Packaging
Maximum Operating Temperature
Brand
Collector-Emitter Voltage
Mounting
Package Type
Pin Count
Operating Temperature Min
Operating Temperature Classification
Channel Type
Gate To Emitter Voltage Max
Rad Hardened
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We are delighted to provide the RJH60D6DPK-00#T0 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJH60D6DPK-00#T0 and other electronic components in the IGBT Transistors category and beyond.

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Preliminary Datasheet RJH60D6DPK R07DS0164EJ0400 600V - 40A - IGBT Rev.4.00 Application: Inverter Apr 19, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V = 1.6 V typ. (at I = 40 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafer technology High speed switching t = 50 ns typ. (at V = 300 V, V = 15 V, I = 40 A, Rg = 5 , Ta = 25C, inductive load) f CC GE C Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 1. Gate 2. Collector G 3. Emitter 1 2 3 E Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage V / V 600 V CES R Gate to emitter voltage V 30 V GES Collector current Tc = 25C I 80 A C Tc = 100C I 40 A C Note1 Collector peak current ic(peak) 160 A Collector to emitter diode forward current i 30 A DF Note1 Collector to emitter diode forward peak current i (peak) 120 A DF Note2 Collector dissipation P 260 W C Note2 Junction to case thermal resistance (IGBT) j-c 0.48 C/ W Note2 Junction to case thermal resistance (Diode) j-cd 2.10 C/ W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0164EJ0400 Rev.4.00 Page 1 of 9 Apr 19, 2012 RJH60D6DPK Preliminary Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown V 600 V I =10 A, V = 0 BR(CES) C GE voltage Zero gate voltage collector current I / I 5 A V = 600 V, V = 0 CES R CE GE / Diode reverse current Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4.0 6.0 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.6 2.2 V I = 40 A, V = 15 V CE(sat) C GE Note3 V 1.8 V I = 80 A, V = 15 V CE(sat) C GE Input capacitance Cies 2500 pF V = 25 V CE V = 0 Output capacitance Coes 150 pF GE f = 1 MHz Reveres transfer capacitance Cres 70 pF Total gate charge Qg 104 nC V = 15 V GE V = 300 V CE Gate to emitter charge Qge 15 nC I = 40 A C Gate to collector charge Qgc 45 nC Turn-on delay time t 50 ns V = 300 V d(on) CC V = 15 V Rise time t 38 ns GE r I = 40 A C Turn-off delay time t 160 ns d(off) Rg = 5 Fall time t 50 ns f (Inductive load) Turn-on energy E 0.85 mJ on Turn-off energy E 0.60 mJ off Total switching energy E 1.45 mJ total Short circuit withstand time t 3.0 5.0 s V 360 V, V = 15 V sc CC GE Note3 FRD forward voltage V 1.4 1.9 V I = 30 A F F FRD reverse recovery time t 100 ns I = 30 A rr F di /dt = 100 A/ s FRD reverse recovery charge Q 0.18 C F rr FRD peak reverse recovery current I 4.2 A rr Notes: 3. Pulse test. R07DS0164EJ0400 Rev.4.00 Page 2 of 9 Apr 19, 2012

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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