Preliminary Datasheet RJH60D7BDPQ-E0 R07DS0795EJ0300 600V - 50A - IGBT Rev.3.00 Application: Inverter Jul 20, 2016 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V = 1.6 V typ. (at I = 50 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer technology High speed switching t = 50 ns typ. (at V = 300 V, V = 15 V, I = 50 A, Rg = 5 , Ta = 25C, inductive load) f CC GE C Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage V 30 V GES Collector current Tc = 25C IC 90 A Tc = 100C I 50 A C Note1 Collector peak current ic(peak) 200 A Collector to emitter diode forward current i 30 A DF Note1 Collector to emitter diode forward peak current iDF(peak) 120 A Note2 Collector dissipation P 300 W C Note2 Junction to case thermal resistance (IGBT) j-c 0.42 C/W Note2 Junction to case thermal resistance (Diode) j-cd 1.1 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0795EJ0300 Rev.3.00 Page 1 of 9 Jul 20, 2016 RJH60D7BDPQ-E0 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Collector to emitter breakdown VBR(CES) 600 V IC =10 A, VGE = 0 voltage Zero gate voltage collector current I / I 5 A V = 600 V, V = 0 CES R CE GE / Diode reverse current Gate to emitter leak current IGES 1 A VGE = 30 V, VCE = 0 Gate to emitter cutoff voltage V 4.0 6.0 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage VCE(sat) 1.6 2.2 V IC = 50 A, VGE = 15 V Note3 V 1.8 V I = 90 A, V = 15 V CE(sat) C GE Input capacitance Cies 3150 pF VCE = 25 V VGE = 0 Output capacitance Coes 180 pF f = 1 MHz Reveres transfer capacitance Cres 95 pF Total gate charge Qg 125 nC V = 15 V GE V = 300 V CE Gate to emitter charge Qge 25 nC I = 50 A C Gate to collector charge Qgc 50 nC Turn-on delay time td(on) 60 ns VCC = 300 V VGE = 15 V Rise time t 50 ns r IC = 50 A Turn-off delay time td(off) 180 ns Rg = 5 Fall time t 50 ns f (Inductive load) Turn-on energy Eon 0.7 mJ Turn-off energy E 1.4 mJ off Total switching energy Etotal 2.0 mJ Short circuit withstand time t 3.0 5.0 s V 360 V, V = 15 V sc CC GE Note3 FRD forward voltage V 2.5 3.0 V I = 30 A F F FRD reverse recovery time trr 25 ns IF = 30 A diF/dt = 100 A/ s FRD reverse recovery charge Q 32 C rr FRD peak reverse recovery current Irr 1.5 A Notes: 3. Pulse test R07DS0795EJ0300 Rev.3.00 Page 2 of 9 Jul 20, 2016