X-On Electronics has gained recognition as a prominent supplier of RJH60D7BDPQ-E0#T2 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RJH60D7BDPQ-E0#T2 IGBT Transistors are a product manufactured by Renesas. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RJH60D7BDPQ-E0#T2 Renesas

RJH60D7BDPQ-E0#T2 electronic component of Renesas
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Part No.RJH60D7BDPQ-E0#T2
Manufacturer: Renesas
Category: IGBT Transistors
Description: IGBT Transistors IGBT
Datasheet: RJH60D7BDPQ-E0#T2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.0832 ea
Line Total: USD 6.08 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 6.0832
10 : USD 5.7231

   
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We are delighted to provide the RJH60D7BDPQ-E0#T2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJH60D7BDPQ-E0#T2 and other electronic components in the IGBT Transistors category and beyond.

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Preliminary Datasheet RJH60D7BDPQ-E0 R07DS0795EJ0300 600V - 50A - IGBT Rev.3.00 Application: Inverter Jul 20, 2016 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage V = 1.6 V typ. (at I = 50 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer technology High speed switching t = 50 ns typ. (at V = 300 V, V = 15 V, I = 50 A, Rg = 5 , Ta = 25C, inductive load) f CC GE C Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to emitter voltage / diode reverse voltage VCES / VR 600 V Gate to emitter voltage V 30 V GES Collector current Tc = 25C IC 90 A Tc = 100C I 50 A C Note1 Collector peak current ic(peak) 200 A Collector to emitter diode forward current i 30 A DF Note1 Collector to emitter diode forward peak current iDF(peak) 120 A Note2 Collector dissipation P 300 W C Note2 Junction to case thermal resistance (IGBT) j-c 0.42 C/W Note2 Junction to case thermal resistance (Diode) j-cd 1.1 C/W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0795EJ0300 Rev.3.00 Page 1 of 9 Jul 20, 2016 RJH60D7BDPQ-E0 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Collector to emitter breakdown VBR(CES) 600 V IC =10 A, VGE = 0 voltage Zero gate voltage collector current I / I 5 A V = 600 V, V = 0 CES R CE GE / Diode reverse current Gate to emitter leak current IGES 1 A VGE = 30 V, VCE = 0 Gate to emitter cutoff voltage V 4.0 6.0 V V = 10 V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage VCE(sat) 1.6 2.2 V IC = 50 A, VGE = 15 V Note3 V 1.8 V I = 90 A, V = 15 V CE(sat) C GE Input capacitance Cies 3150 pF VCE = 25 V VGE = 0 Output capacitance Coes 180 pF f = 1 MHz Reveres transfer capacitance Cres 95 pF Total gate charge Qg 125 nC V = 15 V GE V = 300 V CE Gate to emitter charge Qge 25 nC I = 50 A C Gate to collector charge Qgc 50 nC Turn-on delay time td(on) 60 ns VCC = 300 V VGE = 15 V Rise time t 50 ns r IC = 50 A Turn-off delay time td(off) 180 ns Rg = 5 Fall time t 50 ns f (Inductive load) Turn-on energy Eon 0.7 mJ Turn-off energy E 1.4 mJ off Total switching energy Etotal 2.0 mJ Short circuit withstand time t 3.0 5.0 s V 360 V, V = 15 V sc CC GE Note3 FRD forward voltage V 2.5 3.0 V I = 30 A F F FRD reverse recovery time trr 25 ns IF = 30 A diF/dt = 100 A/ s FRD reverse recovery charge Q 32 C rr FRD peak reverse recovery current Irr 1.5 A Notes: 3. Pulse test R07DS0795EJ0300 Rev.3.00 Page 2 of 9 Jul 20, 2016

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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