X-On Electronics has gained recognition as a prominent supplier of RJH60F0DPQ-A0#T0 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. RJH60F0DPQ-A0#T0 IGBT Transistors are a product manufactured by Renesas. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

RJH60F0DPQ-A0#T0 Renesas

RJH60F0DPQ-A0#T0 electronic component of Renesas
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Part No.RJH60F0DPQ-A0#T0
Manufacturer: Renesas
Category: IGBT Transistors
Description: IGBT, HIGH SPEED, 600V, 50A, TO-247A
Datasheet: RJH60F0DPQ-A0#T0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.0275 ea
Line Total: USD 4.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 4.0275
10 : USD 3.1044
100 : USD 2.5369
500 : USD 2.2822
1000 : USD 2.1251

0
Ship by Wed. 27 Nov to Fri. 29 Nov

Multiples : 1

   
Manufacturer
Product Category
Brand
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Transistor Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RJH60F0DPQ-A0#T0 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RJH60F0DPQ-A0#T0 and other electronic components in the IGBT Transistors category and beyond.

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Preliminary Datasheet RJH60F0DPQ-A0 R07DS0324EJ0200 600 V - 25 A - IGBT Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage V = 1.4 V typ. (at I = 25 A, V = 15 V, Ta = 25C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching t = 90 ns typ. (at I = 30 A, V = 400 V, V = 15 V, Rg = 5 , Ta = 25C, inductive load) f C CC GE Outline RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A) C 4 1. Gate 2. Collector G 3. Emitter 4. Collector 1 2 E 3 Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings Unit Collector to emitter voltage V 600 V CES Gate to emitter voltage V 30 V GES Note1 Collector current Tc = 25 C I 50 A C Note1 Tc = 100C I 25 A C Note1 Collector peak current ic(peak) 100 A Note2 Collector to emitter diode forward peak current i (peak) 100 A DF Collector dissipation P 201.6 W C Junction to case thermal impedance j-c 0.62 C/W Channel temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse width limited by safe operating area. 2. PW 5 s, duty cycle 1% R07DS0324EJ0200 Rev.2.00 Page 1 of 7 Jul 22, 2011 RJH60F0DPQ-A0 Preliminary Electrical Characteristics (Tj = 25C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current I 100 A V = 600V, V = 0 CES CE GE Gate to emitter leak current I 1 A V = 30 V, V = 0 GES GE CE Gate to emitter cutoff voltage V 4 8 V V = 10V, I = 1 mA GE(off) CE C Note3 Collector to emitter saturation voltage V 1.4 1.82 V I = 25 A, V = 15V CE(sat) C GE Note3 1.7 V I = 50 A, V = 15V C GE Input capacitance Cies 1550 pF V = 25 V CE V = 0 V GE Output capacitance Coes 82 pF f = 1 MHz Reverse transfer capacitance Cres 26 pF Switching time t 46 ns I = 30 A, d(on) C V = 400 V, V = 15 V t 92 ns CE GE r Note3 Rg = 5 t 70 ns d(off) Inductive load t 90 ns f Note3 C-E diode forward voltage V 1.2 2.1 V I = 20 A ECF1 F Note3 C-E diode forward voltage V 1.5 V I = 40 A ECF2 F C-E diode reverse recovery time t 90 ns I = 20 A rr F di /dt = 100 A/ s F Notes: 3. Pulse test R07DS0324EJ0200 Rev.2.00 Page 2 of 7 Jul 22, 2011

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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