X-On Electronics has gained recognition as a prominent supplier of IKW50N60T IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKW50N60T IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKW50N60T Infineon

Hot IKW50N60T electronic component of Infineon
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Part No.IKW50N60T
Manufacturer: Infineon
Category: IGBT Transistors
Description: Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 50A
Datasheet: IKW50N60T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.6188 ea
Line Total: USD 4.62 
Availability - 1787
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1787
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 4.6188
10 : USD 4.1265
30 : USD 3.2648
90 : USD 2.9682
480 : USD 2.8303
960 : USD 2.769

641
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 6.1295
10 : USD 5.3475
25 : USD 4.899
100 : USD 4.784
240 : USD 4.1745
480 : USD 4.1515
1200 : USD 3.841
2640 : USD 3.7605
5040 : USD 3.68

126
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 7.504
3 : USD 6.272
8 : USD 5.922
30 : USD 5.712
120 : USD 5.698

232
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 14
Multiples : 1
14 : USD 7.3312
25 : USD 7.0162
50 : USD 6.7489
100 : USD 6.5199

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
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Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
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Length
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the IKW50N60T from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKW50N60T and other electronic components in the IGBT Transistors category and beyond.

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IKW50N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5 s Designed for : G - Frequency Converters E - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) PG-TO247-3 Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKW50N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.45 K/W t h J C junction case Diode thermal resistance, R 0.8 t h J C D junction case Thermal resistance, R 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic V V =0V, I =0.2mA Collector-emitter breakdown voltage 600 - - V ( B R ) C E S G E C V V = 15V, I =50A Collector-emitter saturation voltage C E ( s a t ) G E C - 1.5 2 T =25 C j - 1.9 - T =175 C j Diode forward voltage V V =0V, I =50A F G E F T =25 C - 1.65 2.05 j - 1.6 - T =175 C j V I =0.8mA,V =V Gate-emitter threshold voltage 4.1 4.9 5.7 G E ( t h) C C E G E I V =600V, Zero gate voltage collector current A C E S C E V =0V G E T =25 C j - - 40 T =175 C j - - 3500 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =50A - 31 - S f s C E C Integrated gate resistor R - G i n t Dynamic Characteristic C V =25V, Input capacitance - 3140 - pF i s s C E Output capacitance C V =0V, - 200 - G E o s s f=1MHz C Reverse transfer capacitance - 93 - r s s Q V =480V, I =50A Gate charge - 310 - nC G a t e C C C V =15V G E Internal emitter inductance L - 13 - nH E measured 5mm (0.197 in.) from case 1) I Short circuit collector current V =15V,t 5 s - 458.3 - A C ( S C ) G E S C V = 400V, C C T 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.6 20.09.2013 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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