Technische Information / Technical Information IGBT-Module TDB6HK180N16RR IGBT-modules EconoPACK2 Modul EconoPACK2 module Vorlufige Daten / Preliminary Data V = 1200V CES I = 180A / I = 360A C nom CRM Typische Anwendungen Typical Applications Aktiver Gleichrichter Active Rectifier Halbgesteuerte B6-Brcke Half Controlled B6-bridge Mechanische Eigenschaften Mechanical Features 2,5 kV AC 1min Isolationsfestigkeit 2.5 kV AC 1min Insulation Al O Substrat mit kleinem thermischen Al O Substrate with Low Thermal Resistance 2 3 2 3 Widerstand Hohe Leistungsdichte High Power Density Hohe mechanische Robustheit High mechanical robustness Isolierte Bodenplatte Isolated Base Plate Kompaktes Design Compact design Kupferbodenplatte Copper Base Plate Ltverbindungstechnik Solder Contact Technology RoHS konform RoHS compliant Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: NK date of publication: 2013-08-19 approved by: RS revision: 2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module TDB6HK180N16RR IGBT-modules Vorlufige Daten Preliminary Data Diode, Gleichrichter / Diode, Rectifier Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip T = 80C I 150 A C FRMSM Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 80C I 180 A C RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 1600 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 1400 A Grenzlastintegral tp = 10 ms, Tvj = 25C 13000 As It It - value t = 10 ms, T = 150C 9500 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 150 A V 1,20 V vj F F Forward voltage Schleusenspannung Tvj = 150C VTO 0,83 V Threshold voltage Ersatzwiderstand T = 150C r 2,30 m vj T Slope resistance Sperrstrom Tvj = 150C, VR = 1600 V IR 1,00 mA Reverse current Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,35 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,165 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) prepared by: NK date of publication: 2013-08-19 approved by: RS revision: 2.0 2