Technische Information / technical information IGBT-Module TDB6HK180N16RR B11 IGBT-modules Diode-Gleichrichter / diode-rectifier Vorlufige Daten / preliminary data Hchstzulssige Werte / maximum rated values % & () * +,- .//0 1 . & 2 3 4 % 2 6 * 7 ,- 89/0:0 1+ % 3 5 3 3 4 & & 4 3 6 * 7 ,- 8/0:0 17 3 5 3 3 3 4 % < * 1 3 = () * +,- 1 89:0 & % < * 1 3 = () * 1+ ,- 1> 4 & < * 1 3 = () * +,- 1 8 8 < * 1 3 = () * 1+ ,- + Charakteristische Werte / characteristic values 3 3 5 2 & () * 1+ ,-= 89 * 1+ .9 1= . % & & () * 1+ ,- .AB =7 . & C % () * 1+ ,- A = 3D 3 () * 1+ ,-= ./ * 1 . 8/ 1= 3 8 EF 3 % 2 HIJ6 = + KLE 3 = G M & & EF 3 % 2 L HI6X =1 + KLE 3 = NOPQHR * 1 ELS3TKU L NVWRPQR * 1 ELS3TKU 1Technische Information / technical information IGBT-Module TDB6HK180N16RR B11 IGBT-modules Vorlufige Daten preliminary data Thyristor-Gleichrichter / thyristor-rectifier Hchstzulssige Werte / maximum rated values % & () * +,- .//0 1 . & 2 3 4 % - 6 * 7 ,- 89/0:0 1+ % 3 5 3 3 4 & & 4 3 6 * 7 ,- 8/0:YPZ 17 3 5 3 3 3 4 % O * 1 3 = () * +,- 1++ 89:0 & % O * 1 3 = () * 1 ,- 1 4 & O * 1 3 = () * +,- 1 8 8 O * 1 3 = () * 1 ,- 7>+ 3 28 8C- +> S L U W 1 L * + = 4 * = = 4L * = L & () * 1 ,-= 2 * = .2 S L U W 1 .L & Charakteristische Werte / characteristic values 2 & () * 1 ,-= 89 * 1+ .9 1= . % & & () * 1 ,- . AB =7+ . & C % () * 1 ,- A = 3D a 3 () * +,-= b * . 8cA 1 3 & && a & () * +,-= b * cA = . & && & 3 () * 1 ,-= b * . = 8cb 3 & && () * 1 ,-= b * =+ .b/0 = & () * 1 ,-= b * =+ .b/0 .cb = . & && & 3 () * +,-= b * .=d * + D 8X 3 & C 3 () * +,-= b * .=ce f D 8g ++ 3 & c0 * = = cL * = L = V * 1 a & 28 8C- > Vh 1= & 3 () * +,-= c0 * = = cL * = L i % () * 1 ,-= A0 * + 33 3 /0 * 1 .= .b0 * = .b/0 k 1+ jbL * .L = AL * 1 L 3 8/ () * 1 ,-= ./ * 1 . += 3 8b 8 EF 3 % HIJ6 = KLE 3 = G M & & EF 3 % L HI6X =1> KLE 3 = NOPQHR * 1 ELS3TKU L NVWRPQR * 1 ELS3TKU 2