CM900DU-24NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Mega Power Dual www.pwrx.com IGBTMOD 900 Amperes/1200 Volts T MEASURED POINTS C (THE SIDE OF CU BASEPLATE) A P D (8 PLACES) G L U H H K C2E1 J C C F S G E C B E E G T F Description: J Powerex IGBTMOD Modules E2 C1 are designed for use in switching U applications. Each module con- R (9 PLACES) L sists of two IGBT Transistors in a V H HH H HH M G G half-bridge configuration with each transistor having a reverse-con- nected super-fast recovery free- wheel diode. All components and LABEL interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G2 C2 E2 Features: C2E1 Low Drive Power E2 C1 Low V CE(sat) E1 Discrete Super-Fast Recovery G1 Free-Wheel Diode Outline Drawing and Circuit Diagram Isolated Baseplate for Easy Dimensions Inches Millimeters Dimensions Inches Millimeters Heat Sinking L 1.36 +0.04/-0.02 34.6 +1.0/-0.5 A 5.91 150.0 Applications: M 0.0750.08 1.90.2 B 5.10 129.5 High Power UPS P 0.26 6.5 C 1.670.01 42.50.25 Large Motor Drives R M6 Metric M6 D 5.410.01 137.50.25 Utility Interface Inverters U 0.62 15.7 E 6.54 166.0 Ordering Information: V 0.71 18.0 F 2.910.01 74.00.25 Example: Select the complete W 0.75 19.0 G 1.65 42.0 module number you desire from X 0.43 11.0 H 0.55 14.0 the table - i.e. CM900DU-24NF is Y 0.83 21.0 J 1.500.01 38.00.25 a 1200V (V ), 900 Ampere Dual CES Z 0.41 10.5 K 0.16 4.0 IGBTMOD Power Module. AA 0.22 5.5 Housing Type (J.S.T. MFG. CO. LTD) Current Rating V CES S = VHR-2N Type Amperes Volts (x 50) T = VHR-5N CM 900 24 02/10 Rev. 1 1Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM900DU-24NF Mega Power Dual IGBTMOD 900 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specified j Ratings Symbol CM900DU-24NF Units Junction Temperature T -40 to 150 C j Storage Temperature T -40 to 125 C stg Collector-Emitter Voltage (G-E SHORT) V 1200 Volts CES Gate-Emitter Voltage (C-E SHORT) V 20 Volts GES Collector Current DC (T = 96C)** I 900 Amperes C C Peak Collector Current (T 150C) I 1800* Amperes j CM Emitter Current*** I 900 Amperes E Peak Emitter Current*** I 1800* Amperes EM Maximum Collector Dissipation (T < 150C) (T = 25C) P 2550 Watts j C C Mounting Torque, M6 Mounting Screws 40 in-lb Mounting Torque, M6 Main Terminal Screw 40 in-lb Weight (Typical) 1400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts iso Static Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 1.0 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 90mA, V = 10V 6 7 8 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 900A, V = 15V, T = 25C 1.8 2.5 Volts CE(sat) C GE j (Without Lead Resistance) (Chip) I = 900A, V = 15V, T = 125C 2.0 Volts C GE j Module Lead Resistance R I = 900A, Terminal-chip 0.143 m (lead) C Total Gate Charge Q V = 600V, I = 900A, V = 15V 4800 nC G CC C GE Emitter-Collector Voltage*** V I = 900A, V = 0V 3.2 Volts EC E GE Dynamic Electrical Characteristics, T = 25C unless otherwise specified j Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C 140 nF ies Output Capacitance C V = 10V, V = 0V 16 nF oes CE GE Reverse Transfer Capacitance C 3 nF res Inductive Turn-on Delay Time t V = 600V, 600 ns d(on) CC Load Rise Time t I = 900A, I = 900A, 200 ns r C E Switch Turn-off Delay Time t V = V = 15V, 800 ns d(off) GE1 GE2 Times Fall Time t R = 0.35, 300 ns f G Diode Reverse Recovery Time*** t Inductive Load 500 ns rr Diode Reverse Recovery Charge*** Q Switching Operation 50 C rr * Pulse width and repetition rate should be such that the device junction temperature (T ) does not exceed T rating. j j(max) ** T measurement points is just under the chips. If this value is used, R should be measured just under the chips. th(f-a) C ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 02/10 Rev. 1