LXA04T600, LXA04B600 QSpeed Family 600 V, 4 A X-Series PFC Diode Product Summary General Description I 4 A F(AVG) This device has the lowest Q of any 600V RR V 600 V RRM Silicon diode. Its recovery characteristics Q (Typ at 125 C) 50 nC RR increase efficiency, reduce EMI and eliminate I (Typ at 125 C) 2.6 A RRM snubbers. Softness t /t (Typ at 125 C) 0.8 b a Applications Power Factor Correction (PFC) Boost Diode Pin Assignment Motor drive circuits DC-AC Inverters KK KKK Features NCNCNC KK Low Q , Low I , Low t KKK RR RRM RR AA High dI /dt capable (1000A/s) F AA Soft recovery TO-220AC TO-263AB Benefits LXA04T600 LXA04B600 Increases efficiency Eliminates need for snubber circuits AKAK Reduces EMI filter component size & count Enables extremely fast switching RoHS Compliant Package uses Lead-free plating and Green mold compound. Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units V Peak repetitive reverse voltage 600 V RRM I Average forward current T = 150 C, T = 127 C 4 A F(AVG) J C I Non-repetitive peak surge current 60 Hz, cycle 30 A FSM I Non-repetitive peak surge current cycle of t=28 s Sinusoid, T =25 C 350 A FSM C T Maximum junction temperature 150 C J(MAX) T Storage temperature 55 to 150 C STG Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 C P Power dissipation T = 25 C 52 W D C V Peak repetitive reverse voltage 600 V RRM Thermal Resistance Symbol Resistance from: Conditions Rating Units R Junction to ambient TO-220 (Only) 62 C/W JA Junction to case 2.4 C/W R JC www.powerint.com January 2011 LXA04T600, LXA04B600 Electrical Specifications at T = 25 C (unless otherwise specified) J Symbol Parameter Conditions Min Typ Max Units DC Characteristics I Reverse current V = 600V, T = 25 C - - 250 R R J A V = 600V, T = 125 C - 0.45 - mA R J V Forward voltage I = 4A, T = 25 C - 2.42 2.96 V F F J I = 4A, T = 150 C - 2.10 - V F J C Junction capacitance V = 10V, 1 MHz - 21 - pF J R Dynamic Characteristics t TReverse recovery time =25 C - 18.5 - ns RR dI/dt =200 A/ s J V =400 V, I =4 A R F T =125 C - 27.5 - ns J Q TReverse recovery charge dI/dt =200A/ s =25 C - 21.1 29.0 nC RR J V =400 V, I =4 A R F T =125 C - 50.0 - nC J I TMaximum reverse =25 C - 1.75 2.3 A RRM dI/dt =200 A/ s J recovery current V =400 V, I =4 A R F T =125 C - 2.6 - A J S T =25 C - 0.8 - dI/dt =200 A/ s J t b Softness factor = V =400 , I =4 A R F T =125 C - 0.8 - J t a Note to component engineers: QSpeed diodes employ Schottky technologies in their design and construction. Therefore, Component Engineers should plan their test setups to be similar to those for traditional Schottky test setups. (For additional details, see Application Note AN-300.) VR D1 L1 DUT I t F RR 15V Pulse generator dI /dt + F Rg t t a b Q1 0 0.1xI RRM I RRM Figure 2. Reverse Recovery Test Circuit Figure 1. Reverse Recovery Definitions 2 www.powerint.com Rev 1.4 01/11