PE42426 Document Category: Product Specification UltraCMOS SPDT RF Switch, 56000 MHz Features Figure 1 PE42426 Functional Diagram Best in class linearity across frequency band Exceptional harmonics RFC 2fo of 121 dBc 900 MHz 3fo of 135 dBc 900 MHz Low insertion loss and high isolation performance RF1 RF2 Insertion loss of 0.3 dB 2000 MHz High ESD performance of 3 kV HBM Packaging 12-lead 3 3 0.75 mm QFN CMOS Control Driver Applications V1 Land mobile radio (LMR) General switching applications Product Description The PE42426 is a HaRP technology-enhanced reflective SPDT RF switch designed for use in land mobile radio (LMR) and general switching applications. It delivers high linearity and excellent harmonics performance across the entire operational band. It also features low insertion loss and high isolation performance making the PE42426 ideal for general switching applications. The PE42426 is manufactured on Peregrines UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. 2016, Peregrine Semiconductor Corporation. All rights reserved. Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-78386-1 (09/2016) www.psemi.comPE42426 SPDT RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE42426 Parameter/Condition Min Max Unit Supply voltage, V 0.3 5.5 V DD Digital input voltage, V1 0.3 3.6 V RF input power 39 dBm Maximum junction temperature +150 C Storage temperature range 65 +150 C (1) 3000 V ESD voltage HBM , all pins (2) 500 V ESD voltage CDM , all pins Notes: 1) Human body model (MIL-STD 883 Method 3015). 2) Charged device model (JEDEC JESD22-C101). Page 2 DOC-78386-1 (09/2016) www.psemi.com