PE42020 Product Specification UltraCMOS True DC RF Switch, 0 Hz8000 MHz Features Figure 1 PE42020 Functional Diagram High power handling 30 dBm DC RFC 36 dBm 8 GHz Maximum voltage (DC or AC peak): 10V on the RF ports RF1 RF2 Total harmonic distortion (THD): 84 dBc Configurable 50 absorptive or open reflective switch via a single pin (LZ) 50 50 Packaging 20-lead 4 4 mm QFN DC Tracking Applications CMOS Control Driver and ESD Test and measurement Signal sources LZ LS CTRL V V DD SS Communication testers Spectrum analyzers Network analyzers Automated test equipment Complex combination of DC + RF/analog and digital signals Product Description The PE42020 is a HaRP technology-enhanced SPDT True DC RF switch that operates from zero Hertz up to 8 GHz with integrated RF, analog and digital functions. The PE42020 can accommodate up to 10V input DC voltage on the RF ports. It can be configured as a 50 absorptive or an open reflective True DC switch via the single LZ pin. The PE42020 True DC RF switch delivers excellent RF performance and high power handling down to zero Hertz, making this device ideal for handling the complex combination of DC, RF/analog and digital signals in test and measurement (T&M) and automated test equipment (ATE) applications. The PE42020 is manufactured on Peregrines UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. Peregrines HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. 2014 2017, Peregrine Semiconductor Corporation. All rights reserved. Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-23814-4 (7/2017) www.psemi.comPE42020 UltraCMOS True DC RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE42020 Parameter/Condition Min Max Unit Positive supply voltage, V 10 17 V DD Negative supply voltage, V 17 10 V SS Digital input voltage (CTRL, LS, LZ) 0.3 3.6 V RF input power (RFCRFX), 50 040 MHz Fig. 2Fig. 5 dBm 408000 MHz 38 dBm Storage temperature range 65 +150 C (1) 1000 V ESD voltage HBM, all pins (2) 150 V ESD voltage MM, all pins (3) 1000 V ESD voltage CDM, all pins Notes: 1) Human body model (MIL-STD 883 Method 3015). 2) Machine model (JEDEC JESD22-A115). 3) Charged device model (JEDEC JESD22-C101). Page 2 DOC-23814-4 (7/2017) www.psemi.com