EK46120-02 pSemi

PE46120 Document Category: Product Specification Monolithic Phase & Amplitude Controller, 1.82.2 GHz Features Figure 1 PE46120 Block Diagram 90 phase splitter 5-bit digital phase shifter, 87.2 range, 2.8 resolution 0 4-bit digital step attenuator, 7.5 dB range, 0.5 dB RF OUT2 87.2 7.5 dB resolution 2.8 LSB 0.5 dB LSB RF High power handling and linearity IN P0.1dB of +35 dBm RF OUT1 Input IP3 of +60 dBm -90 87.2 0 dB 2.8 LSB Packaging 32-lead 6 6 0.85 mm QFN V DD SP ENB Digital Interface Applications DS GND SDO Wireless infrastructure 3 Macro cells Serial Small cells (micro, pico) Interface Distributed antenna systems (DAS) Precision phase shifter Dual polarization antenna alignment Analog linearization techniques Product Description The PE46120 is a HaRP technology-enhanced monolithic phase and amplitude controller (MPAC) designed for precise phase and amplitude control of two independent RF paths. It optimizes system performance while reducing manufacturing costs of transmitters that use symmetric or asymmetric power amplifier designs to efficiently process signals with large peak-to-average ratios. This monolithic RFIC integrates a 90 RF splitter, digital phase shifters and a digital step attenuator along with a low voltage CMOS serial interface. It can cover a phase range of 87.2 in 2.8 steps and an attenuation range of 7.5 dB in 0.5 dB steps, while providing excellent phase and amplitude accuracy from 1.82.2 GHz. The PE46120 also features exceptional linearity, high output port-to-port isolation and extremely low power consumption relative to competing module solutions. It is offered in a 32-lead 6 6 0.85 mm QFN package. The PE46120 is manufactured on Peregrines UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. Peregrines HaRP technology enhancements deliver high linearity and excellent harmonics performance. 20142016, Peregrine Semiconductor Corporation. All rights reserved. Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-54655-7 (03/2016) www.psemi.com SDI CLK LEPE46120 MPAC Absolute Maximum Ratings Exceeding absolute maximum ratings listed inTable 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE46120 Parameter/Condition Min Max Unit Supply voltage, V 0.3 5.5 V DD Digital input voltage 0.3 3.6 V Maximum input power 35 dBm Storage temperature range 65 +150 C (1) ESD voltage HBM 500 V All pins 1000 V RF pins to GND (2) 1000 V ESD voltage CDM, all pins Notes: 1) Human body model (MIL-STD 883 Method 3015.7). 2) Charged device model (JEDEC JESD22-C101). Page 2 DOC-54655-7 (03/2016) www.psemi.com