PE29102 Document Category: Product Specification UltraCMOS High-speed FET Driver, 40 MHz Features Figure 1 PE29102 Functional Diagram High- and low-side FET drivers Dead-time control Fast propagation delay, 9 ns Tri-state enable mode Sub-nanosecond rise and fall time 2A/4A peak source/sink current Package flip chip Applications Class D audio DCDCconversions ACDC conversions Wireless charging Envelope tracking LiDAR Product Description The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral components and enable innovative designs for applications such as class D audio and wireless charging. The PE29102 is available in a flip chip package. The PE29102 is manufactured on Peregrines UltraCMOS process, a patented advanced form of silicon-on- insulator (SOI) technology, offering the performance of GaAs with the economy and integration of conventional CMOS. 2018, pSemi Corporation. All rights reserved. Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-81227-7 (11/2018) www.psemi.com END OF LIFEPE29102 High-speed FET Driver Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE29102 Parameter/Condition Min Max Unit Low-side bias (LSB) to low-side source (LSS) 0.3 7 V High-side bias (HSB) to high-side source (HSS) 0.3 7 V Input signal 0.3 7 V HSS to LSS 100 100 V HSS to GND -1 100 V LSS to GND -1 100 V (*) 500 V ESD voltage HBM , all pins Note: * Human body model (JEDEC JS001, Table 2A). Page 2 of 16 DOC-81227-7 (11/2018) www.psemi.com END OF LIFE