PE42420E-Z pSemi

Product Specification PE42420 UltraCMOS SPDT RF Switch 206000 MHz Product Description Features The PE42420 is a HaRP technology-enhanced absorptive SPDT RF switch designed for use in 3G/4G HaRP technology enhanced wireless infrastructure and other high performance RF No gate and phase lag applications. It is ideal for transmit path switching, RF and No drift in insertion loss and phase IF signal routing, AGC loops, and filter bank switching applications. High linearity IIP3 of 65 dBm This general purpose switch is comprised of two symmetric High isolation RF ports and has exceptional port to port isolation up to 69 dB 1 GHz 6 GHz. An integrated CMOS decoder facilitates a two-pin 62 dB 3 GHz low voltage CMOS control interface. In addition, no external blocking capacitors are required if 0 VDC is 50 dB 6 GHz present on the RF ports. Supports +1.8V control logic +125 C operating temperature The PE42420 is manufactured on pSemis UltraCMOS High ESD tolerance process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. 4 kV HBM on RFC pSemis HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1. Functional Diagram Figure 2. Package Type 20-lead 4 4 mm LGA DOC-02177 Document No. DOC-89737-6 www.psemi.com 20182022 pSemi Corp. All rights reserved. Page 1 of 12 PE42420 Product Specification Table 1. Electrical Specifications +25C, V = 3.0V (Z = Z = 50 ) DD S L Parameter Path Condition Min Typ Max Unit Operating frequency 20 6000 MHz 201000 MHz 0.95 1.15 dB 10002000 MHz 0.95 1.15 dB 1 20003000 MHz 1.00 1.20 dB Insertion loss RFCRFX 1 30004000 MHz 1.15 1.35 dB 1 40005000 MHz 1.25 1.55 dB 1 50006000 MHz 1.60 1.90 dB 201000 MHz 67 69 dB 10002000 MHz 63 64 dB 20003000 MHz 59 62 dB Isolation RFXRFX 30004000 MHz 60 64 dB 40005000 MHz 54 60 dB 50006000 MHz 44 50 dB 201000 MHz 69 71 dB 10002000 MHz 65 67 dB 20003000 MHz 63 68 dB Isolation RFCRFX 30004000 MHz 62 67 dB 40005000 MHz 52 57 dB 50006000 MHz 44 48 dB 204000 MHz 20 dB 1 Return loss (all ports) 40005000 MHz 15 dB 1 50006000 MHz 13 dB 20100 MHz 31 dBm 2 Input 1dB compression point RFCRFX 33 dBm 1006000 MHz 20100 MHz 80 dBm Input IP2 RFCRFX 110 dBm 1006000 MHz 20100 MHz 65 dBm Input IP3 RFCRFX 60 65 dBm 1006000 MHz Switching time 50% CTRL to 90% or 10% RF 300 400 ns Notes: 1. Insertion loss and return loss can be improved by external matching. 2. The input 1dB compression point is a linearity figure of merit. Refer to Table 3 for the maximum operating power P (50). IN 20182022 pSemi Corp. All rights reserved. Document No. DOC-89737-6 UltraCMOS RFIC Solutions Page 2 of 12