ESD Product Specification PE42520 UltraCMOS SPDT RF Switch 9 kHz13 GHz Product Description Features The PE42520 SPDT absorptive RF switch is designed for use in Test/ATE and other high performance wireless HaRP technology enhanced applications. This broadband general purpose switch Fast settling time maintains excellent RF performance and linearity from No gate and phase lag 9 kHz through 13 GHz. This switch is a pin-compatible No drift in insertion loss and phase upgraded version of PE42552 with higher power handling of 36 dBm continuous wave (CW) and 38 dBm High power handling 8 GHz in 50 instantaneous power in 50 8 GHz. The PE42520 36 dBm CW exhibits high isolation, fast settling time, and is offered in 38 dBm instantaneous power a 3 3 mm QFN package. 26 dBm terminated port The PE42520 is manufactured on pSemis UltraCMOS High linearity process, a patented variation of silicon-on-insulator (SOI) 66 dBm IIP3 technology on a sapphire substrate, offering the Low insertion loss performance of GaAs with the economy and integration 0.8 dB 3 GHz 0.9 dB 10 GHz 2.0 dB 13 GHz Figure 1. Functional Diagram High isolation RFC 45 dB 3 GHz 31 dB 10 GHz 18 dB 13 GHz RF2 ESD performance RF1 ESD ESD 4 kV HBM on RF pins to GND 2.5 kV HBM on all pins 1 kV CDM on all pins 50 50 CMOS Control Driver and ESD Figure 2. Package Type 16-lead 3 3 mm QFN LS CTRL Vss DOC-50572 EXT Document No. DOC-73010-3 www.psemi.com 2015 2021 pSemi Corporation All rights reserved. Page 1 of 16 PE42520 Product Specification Table 1. Electrical Specifications +25 C, V = 3.3V, V = 0V or V = 3.4V, V = 3.4V, DD SS EXT DD SS EXT (Z = Z = 50 ), unless otherwise noted S L Parameter Path Condition Min Typ Max Unit As Operation frequency 9 kHz 13 GHz shown 9 kHz10 MHz 0.60 0.80 dB 10 MHz3 GHz 0.80 1.00 dB 3 GHz7.5 GHz 0.85 1.05 dB Insertion loss RFCRFX 7.5 GHz10 GHz 0.90 1.10 dB 10 GHz12 GHz 1.20 1.65 dB 12 GHz13 GHz 2.00 2.70 dB 9 kHz10 MHz 70 90 dB 10 MHz3 GHz 46 54 dB 3 GHz7.5 GHz 35 38 dB Isolation RFXRFX 7.5 GHz10 GHz 24 27 dB 10 GHz12 GHz 16 19 dB 12 GHz13 GHz 13 17 dB 9 kHz10 MHz 80 90 dB 10 MHz3 GHz 42 45 dB 3 GHz7.5 GHz 41 44 dB Isolation RFCRFX 7.5 GHz10 GHz 26 31 dB 10 GHz12 GHz 16 20 dB 12 GHz13 GHz 13 18 dB 9 kHz10 MHz 23 dB 10 MHz3 GHz 17 dB 3 GHz7.5 GHz 15 dB Return loss (active port) RFCRFX 7.5 GHz10 GHz 18 dB 10 GHz12 GHz 20 dB 12 GHz13 GHz 10 dB 9 kHz10 MHz 23 dB 10 MHz3 GHz 17 dB 3 GHz7.5 GHz 15 dB Return loss (common port) RFCRFX 7.5 GHz10 GHz 18 dB 10 GHz12 GHz 18 dB 12 GHz13 GHz 10 dB 9 kHz10 MHz 32 dB 10 MHz3 GHz 24 dB 3 GHz7.5 GHz 21 dB Return loss (terminated port) RFX 7.5 GHz10 GHz 13 dB 10 GHz12 GHz 8 dB 12 GHz13 GHz 5 dB 1 Input 0.1dB compression point RFCRFX 10 MHz13 GHz Fig. 5 dBm Input IP2 RFCRFX 834 MHz, 1950 MHz 120 dBm Input IP3 RFCRFX 834 MHz, 1950 MHz, and 2700 MHz 66 dBm Settling time 50% CTRL to 0.05 dB final value 15 20 s Switching time 50% CTRL to 90% or 10% of final value 5.5 9.5 s Note 1: The input 0.1dB compression point is a linearity figure of merit. Refer to Table 3 for the RF input power P (50) IN 2015 2021 pSemi Corporation All rights reserved. Document No. DOC-73010-3 UltraCMOS RFIC Solutions Page 2 of 16