PE42522 Document Category: Product Specification UltraCMOS SPDT RF Switch, 9 kHz26.5 GHz Features Figure 1 PE42522 Functional Diagram Broad frequency support from 9 kHz to 26.5 GHz High port to port isolation RFC 63 dB 3 GHz 58 dB 7.5 GHz 39 dB 13.5 GHz RF1 RF2 28 dB 20 GHz 22 dB 26.5 GHz 50 50 HaRP technology enhanced Fast settling time CMOS Control Driver No gate and phase lag No drift in insertion loss and phase V1 V SS EXT Improved high frequency insertion loss and return loss performance with external matching High ESD performance of 3.0 kV HBM on all pins Packaging 29-lead 4 4 mm LGA Applications Test and measurement Microwave backhaul Radar Product Description The PE42522 is a HaRP technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent isolation, high linearity performance and has exceptional settling time making this device ideal for many broadband wireless applica- tions. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42522 is manufactured on pSemis UltraCMOS process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate. pSemis HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. 2014-2015, 2019, pSemi Corporation. All rights reserved. Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-12014-9 (07/2019) www.psemi.comPE42522 UltraCMOS SPDT RF Switch Optional External V Control SS For proper operation, the V control pin must be grounded or tied to the V voltage specified in Table 2. SS EXT SS When the V control pin is grounded, FETs in the switch are biased with an internal negative voltage SS EXT generator. For applications that require the lowest possible spur performance, V can be applied externally SS EXT to bypass the internal negative voltage generator. Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE42522 Parameter/Condition Min Max Unit Supply voltage, V 0.3 5.5 V DD Digital input voltage, V1 0.3 3.6 V (1) RF input power, CW (RFCRFX) Fig. 2, Fig. 3 dBm 9 kHz2.89 MHz 33 dBm >2.89 MHz18 GHz Fig. 4 dBm >1826.5 GHz (2) RF input power, pulsed (RFCRFX) Fig. 2, Fig. 3 dBm 9 kHz2.89 MHz 34 dBm >2.89 MHz18 GHz Fig. 4 dBm >1826.5 GHz (1) RF input power into terminated ports, CW (RFX) Fig. 2, Fig. 3 dBm 9 kHz1.39 MHz 22 dBm >1.39 MHz18 GHz Fig. 4 dBm >1826.5 GHz Storage temperature range 65 +150 C (3) 3000 V ESD voltage HBM, all pins (4) 150 V ESD voltage MM, all pins (5) 500 V ESD voltage CDM, all pins Page 2 of 23 DOC-12014-9 (07/2019) www.psemi.com