PE42542B-X pSemi

ESD Product Specification PE42542 UltraCMOS SP4T RF Switch 9 kHz18 GHz Product Description Features The PE42542 is a HaRP technology-enhanced absorptive SP4T RF switch designed for use in Test/ HaRP technology enhanced ATE, microwave and other wireless applications. This Fast settling time broadband general purpose switch maintains excellent RF performance and linearity from 9 kHz through No gate and phase lag 18 GHz. The PE42542 exhibits low insertion loss, No drift in insertion loss and phase high isolation performance and has fast settling time. Low insertion loss No blocking capacitors are required if DC voltage is 1.10 dB 3 GHz not present on the RF ports. 2.10 dB 13.5 GHz The PE42542 is manufactured on pSemis UltraCMOS 2.50 dB 16 GHz process, a patented variation of silicon-on-insulator (SOI) 3.10 dB 18 GHz technology on a sapphire substrate. High isolation pSemis HaRP technology enhancements deliver high 55 dB 3 GHz linearity and excellent harmonics performance. It is an 33 dB 13.5 GHz innovative feature of the UltraCMOS process, offering the 29 dB 16 GHz performance of GaAs with the economy and integration 26 dB 18 GHz of conventional CMOS. ESD performance 2500V HBM on all pins 150V MM on all pins Figure 1. Functional Diagram 500V CDM on all pins RFC Figure 2. Package Type RF3 29-lead 4 4 mm LGA RF4 ESD ESD 50 50 RF1 RF2 ESD ESD 50 50 CMOS Control/ Driver and ESD V1 V2 Vss DOC-62642 EXT Document No. DOC-12214-5 www.psemi.com 2013-2014, 2019 pSemi Corp. All rights reserved. Page 1 of 14 PE42542 Product Specification Table 1. Electrical Specifications 25C (Z = Z = 50 ), unless otherwise noted S L 1 2 Normal Mode : V = 3.3V, V = 0V or Bypass Mode : V = 3.4V, V = 3.4V DD SS EXT DD SS EXT Parameter Path Condition Min Typ Max Unit Operating frequency 9 k 18 G Hz 9 kHz10 MHz 0.70 0.90 dB 103000 MHz 1.10 1.40 dB 30007500 MHz 1.50 1.95 dB Insertion loss RFCRFX 750010000 MHz 1.75 2.20 dB 1000013500 MHz 2.10 2.40 dB 1350016000 MHz 3.10 3.50 dB 1600018000 MHz 3.90 4.50 dB 9 kHz10 MHz 80 90 dB 103000 MHz 53 55 dB 30007500 MHz 46 48 dB Isolation RFXRFX 750010000 MHz 42 44 dB 1000013500 MHz 35 37 dB 1350016000 MHz 30 31 dB 1600018000 MHz 26 27 dB 9 kHz10 MHz 80 90 dB 103000 MHz 54 55 dB 30007500 MHz 41 42 dB Isolation RFCRFX 750010000 MHz 36 38 dB 1000013500 MHz 31 33 dB 1350016000 MHz 27 29 dB 1600018000 MHz 24 26 dB 9 kHz10 MHz 25 dB Return loss RFCRFX 103000 MHz 15 dB (active and common port) 300018000 MHz 13 dB Return loss RFX 9 kHz18000 MHz 16 dB (terminated port) 3 Input 0.1dB compression point RFCRFX Fig. 4 dBm Input IP2 RFCRFX 1018000 MHz 118 dBm Input IP3 RFCRFX 1018000 MHz 58 dBm Settling time 50% CTRL to 0.05 dB final value 7 10 s Switching time 50% CTRL to 90% or 10% of final value 3 4.5 s Notes: 1. Normal mode: connect V (pin 29) to GND (V = 0V) to enable internal negative voltage generator. SS EXT SS EXT 2. Bypass mode: use V (pin 29) to bypass and disable internal negative voltage generator. SS EXT 3. The input 0.1dB compression point is a linearity figure of merit. Refer to Table 3 for the RF input power P (50 ). MAX 2013-2014, 2019 pSemi Corp. All rights reserved. Document No. DOC-12214-5 UltraCMOS RFIC Solutions Page 2 of 14