ESD Product Specification PE42543 UltraCMOS SP4T RF Switch 9 kHz18 GHz Product Description Features The PE42543 is a HaRP technology-enhanced absorptive SP4T RF switch designed for use in Test/ HaRP technology-enhanced ATE, microwave and other wireless applications. This Fast settling time broadband general purpose switch is a pin-compatible version of the PE42542 with faster switching time and No gate and phase lag settling time. It exhibits low insertion loss, high isolation No drift in insertion loss and phase and linearity performance from 9 kHz through 18 Fast switching time of 500 ns GHz. No blocking capacitors are required if DC voltage is not present on the RF ports. Low insertion loss 1.20 dB 3 GHz The PE42543 is manufactured on pSemis UltraCMOS 2.30 dB 13.5 GHz process, a patented variation of silicon-on-insulator (SOI) 3.10 dB 16 GHz technology on a sapphire substrate. 4.10 dB 18 GHz pSemis HaRP technology enhancements deliver high High isolation linearity and excellent harmonics performance. It is an 55 dB 3 GHz innovative feature of the UltraCMOS process, offering the 32 dB 13.5 GHz performance of GaAs with the economy and integration of conventional CMOS. 28 dB 16 GHz 25 dB 18 GHz ESD performance 2000V HBM on all pins Figure 1. Functional Diagram 150V MM on all pins RFC 250V CDM on all pins Figure 2. Package Type RF3 29-lead 4 4 mm LGA RF4 ESD ESD 50 50 RF1 RF2 ESD ESD 50 50 CMOS Control/ Driver and ESD V1 V2 Vss DOC-62642 EXT Document No. DOC-12314-3 www.psemi.com 2013-2014, 2019 pSemi Corp. All rights reserved. Page 1 of 14 PE42543 Product Specification Table 1. Electrical Specifications 25C (Z = Z = 50 ), unless otherwise noted S L 1 2 Normal Mode : V = 3.3V, V = 0V or Bypass Mode : V = 3.4V, V = 3.4V DD SS EXT DD SS EXT Parameter Path Condition Min Typ Max Unit Operating frequency 9 k 18 G Hz 9 kHz10 MHz 0.70 0.85 dB 103000 MHz 1.20 1.50 dB 30007500 MHz 1.65 2.05 dB Insertion loss RFCRFX 750010000 MHz 2.10 2.55 dB 1000013500 MHz 2.30 2.80 dB 1350016000 MHz 3.10 3.60 dB 1600018000 MHz 4.10 4.70 dB 9 kHz10 MHz 80 90 dB 103000 MHz 53 55 dB 30007500 MHz 46 48 dB Isolation RFXRFX 750010000 MHz 41 43 dB 1000013500 MHz 36 38 dB 1350016000 MHz 31 33 dB 1600018000 MHz 27 29 dB 9 kHz10 MHz 78 90 dB 103000 MHz 54 55 dB 30007500 MHz 41 42 dB Isolation RFCRFX 750010000 MHz 36 38 dB 1000013500 MHz 31 32 dB 1350016000 MHz 27 28 dB 1600018000 MHz 24 25 dB 9 kHz10 MHz 22 dB Return loss RFCRFX 103000 MHz 15 dB (active and common port) 300018000 MHz 14 dB Return loss RFX 9 kHz18000 MHz 14 dB (terminated port) 3 Input 0.1dB compression point RFCRFX Fig. 4 dBm Input IP2 RFCRFX 3018000 MHz 113 dBm Input IP3 RFCRFX 3018000 MHz 59 dBm Settling time 50% CTRL to 0.05 dB final value 2 3 s Switching time 50% CTRL to 90% or 10% of final value 500 800 ns Notes: 1. Normal mode: connect V (pin 29) to GND (V = 0V) to enable internal negative voltage generator. SS EXT SS EXT 2. Bypass mode: use V (pin 29) to bypass and disable internal negative voltage generator. SS EXT 3. The input 0.1dB compression point is a linearity figure of merit. Refer to Table 3 for the RF input power P (50 ). MAX 2013-2014, 2019 pSemi Corp. All rights reserved. Document No. DOC-12314-3 UltraCMOS RFIC Solutions Page 2 of 14