PE426462 Document Category: Product Specification UltraCMOS SP6T RF Switch, 10 MHz8 GHz Features Figure 1 PE426462 Functional Diagram High isolation: 35 dB 6 GHz Low insertion loss: 1.1 dB 6 GHz RFC RF T /T time of 100 ns RISE FALL Power handling of 31 dBm CW RF6 RF1 Logic select (LS) pin provides maximum control logic flexibility RF2 RF5 Terminated all-off state mode RF3 RF4 55 C to +125 C operating temperature support CMOS Control Packaging 24-lead 4 4 0.85 mm QFN switch Driver and ESD configuration V1 V2 V3 Applications Harsh industrial applications up to 8 GHz Applications that require extended temperature 50 support in the range of 55 C to +125 C Filter bank switching RF signal routing Product Description The PE426462 is a HaRP technology-enhanced absorptive SP6T RF switch that supports a frequency range from 10 MHz to 8 GHz. It delivers low insertion loss, fast RF T /T time, and high isolation in the operating RISE FALL temperature range from 55 C to +125 C. It is ideal for harsh industrial applications that require extended support in this temperature range. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE426462 is manufactured on Peregrines UltraCMOS process, a patented advanced form of silicon-on- insulator (SOI) technology. Peregrines HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. 2017, Peregrine Semiconductor Corporation. All rights reserved. Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-77391-3 (03/2017) www.psemi.comPE426462 SP6T RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE426462 Parameter/Condition Min Max Unit Supply voltage, V 0.3 5.5 V DD Digital input voltage (V1, V2, V3, LS) 0.3 3.6 V RF input power (RFCRFX, 50) See Figure 2 dBm (1) See Figure 2 dBm RF input power into terminated ports, CW (RFX, 50 ) Maximum junction temperature +150 C Storage temperature range 65 +150 C (2) 1000 V ESD voltage HBM, all pins (3) 1000 V ESD voltage CDM, all pins Notes: 1) 100% duty cycle, all bands, 50 . 2) Human body model (MIL-STD 883 Method 3015). 3) Charged device model (JEDEC JESD22-C101). Page 2 DOC-77391-3 (03/2017) www.psemi.com