Product Specification PE42851 UltraCMOS SP5T RF Switch 1001000 MHz Product Description Features The PE42851 is a HaRP technology-enhanced SP5T high power RF switch supporting wireless applications Dual mode operation: SP5T or SP3T up to 1 GHz. It offers maximum power handling of HaRP technology enhanced 42.5 dBm continuous wave (CW). It delivers high linearity and excellent harmonics performance. It has Fast settling time both a standard and attenuated RX mode. No blocking No gate and phase lag capacitors are required if DC voltage is not present on No drift in insertion loss and phase the RF ports. Up to 45 dBm instantaneous power The PE42851 is manufactured on pSemis UltraCMOS in 50 process, a patented variation of silicon-on-insulator (SOI) Up to 40 dBm instantaneous power technology on a sapphire substrate, offering the < 8:1 VSWR performance of GaAs with the economy and integration of conventional CMOS. 36 dB TX to RX isolation Low harmonics of 2f and 3f = 80 dBc o o (1.15:1 VSWR) ESD performance Figure 1. Package Type 32-lead 1.5 kV HBM on all pins 5 5 mm QFN 1 kV CDM on all pins Figure 2. Functional Diagram of SP3T Figure 3. Functional Diagram of SP5T Configuration Configuration TX1 TX1 TX2 TX2 ANT TX3 ANT TX3 TX4 TX4 RX RX CMOS CMOS Control Driver Control Driver and ESD and ESD V1 V2 V3 V1 V2 V3 DOC-02178 ANT can be tied to TX1 and TX2 or TX3 and TX4 SP5T, standard configuration Document No. DOC-13014-5 www.psemi.com 2012-2020 pSemi Corporation All rights reserved. Page 1 of 12 PE42851 Product Specification Table 1. Electrical Specifications 40 to +85 C, V = 2.35.5V, V = 0V or V = 3.45.5V, DD SS EXT DD 1 V = 3.4V (Z = Z = 50), unless otherwise noted SS EXT S L Parameter Path Condition Min Typ Max Unit Operating frequency 100 1000 MHz Active TX port 1, 2, 3 or 4 rated power (40 C, +25 C) 100520 MHz 0.25 0.35 dB 5201000 MHz 0.40 0.55 dB 2 Insertion loss ANTTX Active TX port 1, 2, 3 or 4 rated power (+85 C) 100520 MHz 0.30 0.40 dB 5201000 MHz 0.50 0.60 dB Active RX port (40 C, +25 C) 100520 MHz 0.60 0.70 dB 5201000 MHz 0.70 0.90 dB 2 Insertion loss ANTRX Active RX port (+85 C) (un-attenuated state) 100520 MHz 0.70 0.80 dB 5201000 MHz 0.80 1.00 dB 1575 MHz for GPS RX, < 10 dBm, +25 C 1.2 1.3 dB Active RX port 2 Insertion loss (attenuated state) ANTRX 1001000 MHz 15.2 16 16.8 dB 100520 MHz 33 36 dB Isolation (supply biased) TXTX 5201000 MHz 29 30 dB 100520 MHz 34 36 dB Isolation (supply biased) TXRX 5201000 MHz 29 30 dB Unbiased isolation ANTTX +27 dBm 6 dB V , V1, V2, V3 = 0V DD Unbiased isolation ANTRX +27 dBm 14 dB V , V1, V2, V3 = 0V DD Un-attenuated state 100520 MHz 22 27 dB 5201000 MHz 18 22 dB 2 Return loss ANTRX Un-attenuated state, 1575 MHz for GPS RX, < 10 dBm, +25 C 10 14 dB Attenuated state, optimized without attenuator engaged 100520 MHz 16 21 dB 5201000 MHz 13 18 dB 2 100520 MHz 21 28 dB Return loss ANTTX 5201000 MHz 15 17 dB 100520 MHz +40.0 dBm 2nd and 3rd harmonic TX 521870 MHz +38.5 dBm 80 78 dBc (< 1.15:1 VSWR) 8711000 MHz +37.5 dBm 3 100520 MHz +40.0 dBm (pulsed signal, at 10% duty cycle ) 2nd and 3rd harmonic 3 TX 521870 MHz +38.5 dBm (pulsed signal, at 10% duty cycle ) 76 70 dBc (< 8:1 VSWR) 3 8711000 MHz +37.5 dBm (pulsed signal, at 10% duty cycle ) 2nd and 3rd harmonic 3 TX 1001000 MHz +45.0 dBm (pulsed signal, at 10% duty cycle ) 76 70 dBc (50 source/load impedance) 2nd and 3rd harmonic TX 1001000 MHz +42.5 dBm (CW) 78 74 dBc (50 source/load impedance) 5 Input 0.1dB compression point ANTTX 1000 MHz 45.5 dBm Un-attenuated state 42 dBm IIP3 RX Attenuated state 38 dBm Settling time From 50% control until harmonics within specifications 15 s 4 Switching time in normal mode 50% CTRL to 90% or 10% of RF 6 s (V = 0V) SS EXT 4 Switching time in bypass mode 50% CTRL to 90% or 10% of RF 4 s (V = 3.4V) SS EXT Notes: 1. In a 2TX1RX SP3T configuration, TX1 and TX2 are tied and TX3 and TX4 are tied respectively. Refer to Application Note AN35 for SP3T performance data. 2. Narrow trace widths are used near each port to improve impedance matching. Refer to evaluation board layouts (Figure 23) and schematic (Figure 24) for details. 3. 10% of 4620 s period. 4. Normal mode: connect V (pin 16) to GND (V = 0V) to enable internal negative voltage generator. Bypass mode: use V (pin 16) to bypass and SS EXT SS EXT SS EXT disable internal negative voltage generator. 5. The input 0.1dB compression point is a linearity figure of merit. Refer to Table 3 for the RF input power P IN. 2012-2020 pSemi Corporation All rights reserved. Document No. DOC-13014-5 UltraCMOS RFIC Solutions Page 2 of 12