PE43712
Product Specification
UltraCMOS RF Digital Step Attenuator, 9 kHz6 GHz
Features
Figure 1 PE43712 Functional Diagram
Flexible attenuation steps of 0.25 dB, 0.5 dB and
1 dB up to 31.75 dB
Switched Attenuator Array
RF RF
Glitch-less attenuation state transitions
Input Output
Monotonicity: 0.25 dB up to 4 GHz, 0.5 dB up to
5 GHz and 1 dB up to 6 GHz
Extended +105 C operating temperature
Parallel and Serial programming interfaces with
Serial Addressability
Packaging32-lead 5 5 mm QFN
Parallel
Control
Applications
7
3G/4G wireless infrastructure
Serial In
Control Logic Interface
Land mobile radio (LMR) system
Point-to-point communication system
CLK
LE
A0 A1 A2 P/S
Product Description
The PE43712 is a 50 , HaRP technology-enhanced,7-bit RF digital step attenuator (DSA) that supports a
broad frequency range from 9 kHz to 6 GHz. It features glitch-less attenuation state transitions and supports
1.8V control voltage and an extended operating temperature range to +105 C, making this device ideal for
many broadband wireless applications.
The PE43712 is a pin-compatible upgraded version of the PE43601 and PE43701. An integrated digital control
interface supports both Serial Addressable and Parallel programming of the attenuation, including the capability
to program an initial attenuation state at power-up.
The PE43712 covers a 31.75 dB attenuation range in 0.25 dB, 0.5 dB and 1 dB steps. It is capable of
maintaining 0.25 dB monotonicity through 4GHz, 0.5 dB monotonicity through 5 GHz and 1 dB monotonicity
through 6 GHz. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports.
The PE43712 is manufactured on Peregrines UltraCMOS process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
2015, Peregrine Semiconductor Corporation. All rights reserved. Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification DOC-49514-1 (3/2015)
www.psemi.comPE43712
UltraCMOS RF Digital Step Attenuator
Peregrines HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 Absolute Maximum Ratings for PE43712
Parameter/Condition Min Max Unit
Supply voltage, V 0.3 5.5 V
DD
Digital input voltage
0.3 3.6 V
RF input power, 50
9 kHz48 MHz Figure 5 dBm
>48 MHz6 GHz +31 dBm
Storage temperature range 65 +150 C
(1)
3000 V
ESD voltage HBM, all pins
(2)
1000 V
ESD voltage CDM, all pins
Notes:
1) Human body model (MILSTD 883 Method 3015).
2) Charged device model (JEDEC JESD22C101).
Page 2 DOC-49514-1 (3/2015)
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