Product Specification PE45140 UltraCMOS Power Limiter 20 MHz2 GHz Product Description The PE45140 is a HaRP technology-enhanced RF Features power limiter designed for use in tactical and military Monolithic drop in solution with no communications receivers, land mobile radio and other external components required high performance power limiting applications. Adjustable power limiting threshold Unlike traditional PIN diode solutions the limiting from +22 dBm to +32 dBm threshold can be adjusted through a low current control Max power handling voltage (V ), eliminating the need for external CTRL +47 dBm Pulsed (50W) components such as DC blocking capacitors, RF choke inductors, and bias resistors. +40 dBm CW (10W) Superior ESD rating and ESD protection This power limiter has symmetric RF ports that limit 8 kV HBM on RF pins to GND incident power up to 50W pulsed in both biased and 1 kV CDM on all pins unbiased conditions. It provides an extremely fast limiting response to undesired high power signals while delivering 200V MM on all pins low insertion loss and high linearity under safe operating Unbiased power limiting operation power levels. Fast response and recovery time of 1 ns The PE45140 is manufactured on Peregrines Dual mode operation UltraCMOS process, a patented variation of silicon-on- Power limiting mode insulator (SOI) technology on a sapphire substrate. Power reflecting mode Peregrines HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and Figure 2. Package Type 12-lead 3x3 mm QFN integration of conventional CMOS. Figure 1. Functional Diagram P OUT P1dB RF1 RF2 P IN Voltage Control and ESD V CTRL DOC-62357 Document No. DOC-44014-4 www.psemi.com 2014 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 12 PE45140 Product Specification Table 1. Electrical Specifications +25C (Z = Z = 50 ), unless otherwise noted S L Parameter Condition Min Typ Max Unit Operating frequency 20 2000 MHz Power limiting mode 20 MHz1 GHz 0.20 0.45 dB Insertion loss 12 GHz 0.60 1.00 dB 20 MHz1 GHz 16 dB Return loss 12 GHz 10 dB V = 2.5V 915 MHz 32 dBm CTRL P1dB / limiting threshold V = 0.5V 915 MHz 22 dBm CTRL V = 2.5V 915 MHz 31.5 34 dBm 1 CTRL Leakage power V = 0.5V 915 MHz 29 31.5 dBm CTRL Leakage power slope V = 1.0V 915 MHz 0.4 dB/dB CTRL 1 Unbiased leakage power V = 0V 23.5 27 dBm CTRL Input IP2 V = 2.5V 915 MHz 104 dBm CTRL Input IP3 V = 2.5V 915 MHz 64 dBm CTRL Response / recovery time 1 GHz 1 ns 2 Power reflecting mode 1 Leakage power V = +2.5V 915 MHz 1 4.5 dBm CTRL 3 Switching time State change to 10% RF 390 s Notes: 1. Measured with +40 dBm CW applied at input. 2. This mode requires the control voltage to toggle between +2.5V and -2.5V. At +2.5V, the limiter equivalent circuit is a low impedance to ground, reflecting most of the incident power back to the source. 3. State change is V toggle from 2.5V to +2.5V. CTRL 2014 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-44014-4 UltraCMOS RFIC Solutions Page 2 of 12