QPA0506 4 Watt C-Band Power Amplifier Product Overview Qorvos QPA0506 is a MMIC power amplifier fabricated using Qorvos QGaN25 0.25 um GaN on SiC production process. Covering 5 6 GHz, the QPA0506 typically provides 36 dBm of saturated output power and 18 dB of large-signal gain while achieving 53 % power added efficiency. The QPA0506 can support a range of bias voltages to optimize power and PAE to system requirements. The Key Features QPA0506 is matched to 50 ohms with a DC blocked input Frequency Range: 5.0 6.0 GHz and a DC grounded output. Output Power (PIN = 18 dBm): 36.5 dBm The QPA0506 is packaged in a plastic overmolded 4x4 mm PAE (P = 18 dBm): 53 % IN package. The QPA0506 is 100% DC and RF tested to Small Signal Gain: 27.4 dB ensure compliance to electrical specifications. Input Return Loss: 26 dB Output Return Loss: 11 dB Lead free and RoHS compliant. Recommended Bias: VD = 25 V, IDQ = 37.5 mA Package Size: 4.0 mm x 4.0 mm x 0.85 mm Applications Functional Block Diagram Radar VD Communications Satcom RF RF INPUT OUTPUT Ordering Information Part No. Description QPA0506 4 Watt X-Band Power Amplifier VG QPA0506TR7 250 pcs. on 7 inch reel Top View QPA0506EVB QPA0506 Evaluation Board Data Sheet Rev. A, March 2022 Subject to change without notice 1 of 20 www.qorvo.com QPA0506 4 Watt C-Band Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Typ Drain Voltage (V ) 40 V Drain Voltage (V ) 25 V D D Gate Voltage Range (VG) 5 to 0 V Drain Current (IDQ) 37.5 mA Drain Current (I ) 540 mA Drain Current Under RF Drive (I ) See pgs. 4-7 D D DRIVE Gate Current (IG) See plot pg. 12 Gate Voltage Range (VG) 2.8 to 2.0 V Power Dissipation (P ), T = 85 C 26 W Gate Current Under RF Drive (I ) See pgs. 4-5 DISS BASE G DRIVE Electrical specifications are measured at specified test conditions. Input Power (PIN), Pulse (100us/10%), 25 dBm Specifications are not guaranteed over all recommended operating 50 , 24 V, TBASE = 85 C conditions. Input Power (PIN), Pulse (100us/10%), 23 dBm VSWR 3:1, VD = 24 V, TBASE = 85 C Mounting Temperature (30 seconds max.) 260 C Storage Temperature 55 to 125 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency 5 6 GHz Output Power (PIN = 18 dBm) Pulsed VD 36.5 dBm Power Added Efficiency (P = 18 dBm) Pulsed V 53.0 % IN D Small Signal Gain CW 27.4 dB Input Return Loss CW 26 dB Output Return Loss CW 11 dB RD 3 Order IMD (POUT/Tone = 24 dBm) 10 MHz tone spacing 27 dBc nd dBc 2 Harmonic (PIN = 18 dBm) 25 rd dBc 3 Harmonic (PIN = 18 dBm) 39 POUT Temp. Coeff. (85C to25 C, PIN = 18 dBm) Pulsed VD 0.007 dB/C Sm. Sig. Gain Temp. Coefficient (85 C to40 C) CW 0.046 dB/C Gate Leakage Current VD = 10 V, VG = 3.7 V 1.85 mA Test conditions, unless otherwise noted: T = +25 C, VD = 25 V, IDQ = 37.5 mA, PW = 100 us, Duty Cycle = 10% Data Sheet Rev. A, March 2022 Subject to change without notice 2 of 20 www.qorvo.com