Preliminary QPA2575 32 38 GHz 3 Watt Power Amplifier Product Overview Qorvo s QPA2575 is a Ka-band power amplifier fabricated on Qorvo s QPHT15 0.15 um power pHEMT process. The QPA2575 operates from 32 to 38 GHz, providing 3 W of saturated power with 16 % power-added efficiency, and 19 dB small signal gain. To simplify system integration, the QPA2575 is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. It is ideally suited to support both commercial and defense related opportunities. Key Features The QPA2575 is 100% DC and RF tested on-wafer to Frequency Range: 32 38 GHz ensure compliance to performance specifications. PSAT (PIN=23 dBm): 35 dBm Lead-free and RoHS compliant PAE (P =23 dBm): 16 % IN Small Signal Gain: 19 dB Return Loss: 12 dB Bias: Pulsed V = 6 V, I = 2.1 A D DQ Package Dimensions: 7.0 x 8.0 x 1.465 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Radar V V G TOP D TOP Satellite Communications 7 6 RF RF IN OUT 5 2 Ordering Information Part No. Description QPA2575 32 - 38 GHz 3 Watt Power Amplifier QPA2575TR7 250 pieces on a 7 reel QPA2575EVB Evaluation Board for QPA2575 3 4 V V G BOTTOM D BOTTOM Data Sheet Rev. A, Sept. 2020 Subject to change without notice 1 of 16 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential Preliminary QPA2575 32 38 GHz 3 Watt Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/ Range Parameter Min Typ Max Units Drain Voltage (V ) 6.5 V Input Power (PIN)* 19 23 dBm D Drain Voltage (V ) pulsed 6 ** V D Gate Voltage Range (V ) 5 to 0 V G Drain Current, Quiescent (I ) 2.1 A DQ Drain Current (ID) 3.6 A Drain Current, RF (I ) See charts page 4, 8 A D Drive Gate Current (IG) -14 to 29 mA Gate Voltage Typ. Range (VG) 0.35 to -0.85 V Pulsed, 22 W Power Dissipation (P ), T = 85C DISS BASE Gate Current, RF (IG Drive) See charts page 4, 8 mA CW, 16 W Operating Temp. Range, TBASE 40 +25 +85 C Input Power (PIN), 50 , VD = 6 V, IDQ = 2.1 26 dBm Electrical specifications are measured at specified test A, TBASE = 85C conditions. Specifications are not guaranteed over all Input Power (PIN), 3:1 VSWR, VD = 6 V, IDQ 26 dBm recommended operating conditions. = 2.1 A, T = 85C BASE Channel Temperature, TCH 200 C * Non-operating range: 8 18 dBm ** Not recommended for CW due to thermal Mounting Temperature (30 seconds max) 260 C Storage Temperature 55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 32 38 GHz PIN = +23 dBm, Frequency = 32 - 36 GHz 36 Output Power at Saturation, P dBm SAT PIN = +23 dBm, Frequency = 37 - 38 GHz 35 PIN = +23 dBm, Frequency = 32 - 36 GHz 22 Power Added Efficiency, PAE % PIN = +23 dBm, Frequency = 37 - 38 GHz 16 Small Signal Gain, S21 > 19 dB Input Return Loss, IRL 12 dB Output Return Loss, ORL 12 dB PSAT Temperature Coefficient TDIFF = 40C to +85C PIN = +23 dBm 0.009 dBm/C S21 Temperature Coefficient TDIFF = 40C to +85C 0.04 dB/C Notes: 1. Test conditions unless otherwise noted: Pulsed VD = 6 V, IDQ = 2.1 A, adjusting VG (typical -0.6V +/-), Pulse Width = 50 uS, Duty Cycle = 35%, CW RF, TBASE=+25C, Z0=50 2. T is back side of package BASE Data Sheet Rev. A, Sept. 2020 Subject to change without notice 2 of 16 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential