QPA2611 5 Watt X-Band Power Amplifier Product Overview Qorvo s QPA2611 is a packaged, high performance power amplifier fabricated on Qorvo s production 0.15 um GaN on SiC process (QGaN15). Covering 8-12 GHz, the QPA2611 provides > 5 W of saturated output power and 25 dB of large-signal gain while achieving an impressive 42% power-added efficiency. 5 mm x 5 mm plastic overmold QFN Packaged in a small 5 x 5 mm plastic overmold QFN, tight lattice spacing requirements for phased array radar Key Features applications is easily supported. RF input and output ports Frequency Range: 8.0 12.0 GHz are matched to 50 with integrated DC blocking capacitors. QPA2611 is part of a three-amplifier family and is pin Output Power (PIN = 12 dBm): > 37 dBm compatible to QPA2610 and QPA2612. PAE (P = 12 dBm): 42 % IN Small Signal Gain: 35 dB Lead-free and RoHS compliant. Input Return Loss: > 12 dB Output Return Loss: > 15 dB Recommended Bias: VD = 24 V, IDQ = 105 mA Package Size: 5.0 mm x 5.0 mm x 0.85 mm Applications Functional Block Diagram Radar Communications VG VD Satcom RF IN RF OUT Ordering Information Part No. Description QPA2611 5 Watt X-Band Power Amplifier QPA2611TR7 500 pcs. on 7 inch reel QPA2611EVB QPA2611 Evaluation Board Top View Data Sheet Rev. D, October 2020 Subject to change without notice 1 of 24 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential QPA2611 5 Watt X-Band Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Typ Drain Voltage (V ) 29.5 V Drain Voltage (V ) 24 V D D Gate Voltage Range (VG) 4 to 0 V Drain Current (IDQ) 105 mA Drain Current (I ) 1000 mA Drain Current Under RF Drive (I ) See plots pg. 4 D D DRIVE Gate Current (IG) See plot pg. 16 Gate Voltage Range (VG) 2.8 to 2.0 V Power Dissipation (P ), T = 85 C 11 W Gate Current Under RF Drive (I ) See plots pg. 4 DISS BASE G DRIVE Electrical specifications are measured at specified test conditions. Input Power (PIN), Pulse (100us/10%), 21 dBm Specifications are not guaranteed over all recommended operating 50 , 24 V, TBASE = 85 C conditions. Input Power (PIN), Pulse (100us/10%), 21 dBm VSWR 3:1, VD = 24 V, TBASE = 85 C Mounting Temperature (30 seconds max.) 260 C Storage Temperature 55 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency 8 12 GHz Output Power (PIN = 12 dBm) Pulsed VD 38.2 dBm Power Added Efficiency (P = 12 dBm) Pulsed V 42.2 % IN D Small Signal Gain (CW) 35.5 dB Input Return Loss (CW) 12 dB Output Return Loss (CW) 15 dB RD 3 Order IMD (PIN/Tone = 2 dBm) 10 MHz tone spacing 15 dBc POUT Temp. Coeff. (85C to25 C, PIN = 12 dBm)) 0.006 dB/C Sm. Sig. Gain Temp. Coefficient (85 C to40 C) 0.074 dB/C Gate Leakage Current VD = 10 V, VG = 3.7 V 2.22 mA Test conditions, unless otherwise noted: T = +25 C, V = 24 V, I = 105 mA, Pulse Width = 100 us, Duty Cycle = 10% D DQ Data Sheet Rev. D, October 2020 Subject to change without notice 2 of 24 www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential