QPA2612 12 Watt X-Band Power Amplifier Product Overview Qorvo s QPA2612 is a packaged, high performance power amplifier fabricated on Qorvo s production 0.15 um GaN on SiC process (QGaN15). Covering 8-12 GHz, the QPA2612 provides > 12 W of saturated output power and 23 dB of large-signal gain while achieving an impressive 40% power-added efficiency. 5 mm x 5 mm plastic overmold QFN Packaged in a small 5 x 5 mm plastic overmold QFN, tight lattice spacing requirements for phased array radar Key Features applications is easily supported. RF input and output ports Frequency Range: 8.0 12.0 GHz are matched to 50 and are DC grounded. QPA2612 is part of a three-amplifier family and is pin compatible to Output Power (PIN = 18 dBm): > 41 dBm QPA2610 and QPA2611. PAE (P = 18 dBm): > 40 % IN Small Signal Gain: 34 dB Lead-free and RoHS compliant. Input Return Loss: > 16 dB Output Return Loss: > 4 dB Recommended Bias: VD = 24 V, IDQ = 250 mA Package Size: 5.0 mm x 5.0 mm x 0.85 mm Applications Functional Block Diagram Radar Communications VG VD Satcom RF IN RF OUT Ordering Information Part No. Description QPA2612 12 Watt X-Band Power Amplifier QPA2612TR7 250 pcs. on 7 inch reel QPA2612EVB QPA2612 Evaluation Board Top View Data Sheet Rev. A, November 2019 1 of 24 www.qorvo.com QPA2612 12 Watt X-Band Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Typ Drain Voltage (V ) 29.5 V Drain Voltage (V ) 24 V D D Gate Voltage Range (VG) 4 to 0 V Drain Current (IDQ) 250 mA Drain Current (I ) 1700 mA Drain Current Under RF Drive (I ) See plots pg. 4 D D DRIVE Gate Current (IG) See plot pg. 16 Gate Voltage Range (VG) 2.8 to 2.0 V Power Dissipation (P ), CW, 85 C 26.8 W Gate Current Under RF Drive (I ) See plots pg. 4 DISS G DRIVE Electrical specifications are measured at specified test conditions. Input Power (PIN), CW, 50 , 85 C 21 dBm Specifications are not guaranteed over all recommended operating Input Power (P ), CW, VSWR 4:1, IN conditions. 21 dBm V = 24 V, 85 C D Mounting Temperature (30 seconds max.) 260 C Storage Temperature 55 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency 8 12 GHz Output Power (PIN = 18 dBm) Pulsed VD 41.7 dBm Power Added Efficiency (P = 18 dBm) Pulsed V 43.5 % IN D Small Signal Gain (CW) 34.2 dB Input Return Loss (CW) 21 dB Output Return Loss (CW) 6 dB RD 3 Order IMD (PIN/Tone = 5 dBm) 10 MHz tone spacing 14 dBc POUT Temp. Coeff. (85C to25 C, PIN = 18 dBm)) 0.003 dB/C Sm. Sig. Gain Temp. Coefficient (85 C to40 C) 0.105 dB/C Gate Leakage Current VD = 10 V, VG = 3.7 V 5.37 mA Test conditions, unless otherwise noted: T = +25 C, V = 24 V, I = 250 mA, Pulse Width = 100 us, Duty Cycle = 10% D DQ Data Sheet Rev. A, November 2019 2 of 24 www.qorvo.com