QPA2935 2 Watt S-Band GaN Driver Amplifier Product Overview Qorvos QPA2935 is a MMIC power amplifier fabricated using Qorvos QGaN25 0.25 um GaN on SiC production process. Covering 2.73.5 GHz, the QPA2935 typically provides 33 dBm of saturated output power and 18 dB of large-signal gain while achieving greater than 52 % power- added efficiency. The QPA2935 can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2935 is matched to 50 ohms with integrated DC blocking caps on both I/O ports.. Key Features The QPA2935 is packaged in a plastic overmolded 4x4 mm package. The QPA2935 is 100% DC and RF tested to Frequency Range: 2.7 3.5 GHz ensure compliance to electrical specifications. PSAT : 33 dBm (PIN = 15 dBm) PAE: > 52 % (PIN = 15 dBm) Lead free and RoHS compliant. Small Signal Gain: 28.4 dB Bias: V = 25 V, I = 29 mA D DQ Package Dimensions: 4.00 x 4.00 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 20 19 18 17 16 Applications 15 1 Electronic Warfare Civilian and Military Radar 14 2 RF INPUT 13 RF OUPUT 3 12 4 5 11 21 Ordering Information Part No. Description 6 7 8 9 10 QPA2935 2 Watt S-Band GaN Driver Amplifier Top View QPA2935EVB Evaluation Board for QPA2935 QPA2935TR7 500 pcs. on 7 inch reel Data Sheet Rev. B, February 2022 Subject to change without notice 1 of 24 www.qorvo.com QPA2935 2 Watt S-Band GaN Driver Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Value/Range Parameter Min Typ Max Unit Drain Voltage (VD) 40 V Drain Voltage (VD) 25 V Gate Voltage Range (VG) 4 V to +1 V Drain Current (IDQ) 29 mA Drain Current (ID) 385 mA Operating 40 25 85 C Temperature Gate Current (IG) See plot page 17 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all PDISS (under drive), 85 C 11.5 W recommended operating conditions. Input Power, ZL=50 , VD=25 V, 21 dBm I =29 mA, CW, 85 C DQ Input Power, Output VSWR=3:1, 21 dBm VD=25 V, IDQ=29 mA, CW, 85 C Soldering Temperature 260 C Storage Temperature 55 to +125 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency 2.7 3.5 GHz Output Power (PIN=15 dBm) 34.3 dBm Power Added Eff. (PIN=15 dBm) 54.8 % Small Signal Gain 28.4 dB Input Return Loss 15 dB Output Return Loss 7 dB 27 Second Harmonic Level (P =15 dBm, 3.1 GHz) dBc IN 43 Third Harmonic Level (P =15 dBm, 3.1 GHz) dBc IN P Temp. Coeff. (85 C to 40 C, P = 15 dBm) 0.002 dB/C OUT IN Sm. Sig. Gain Temp. Coefficient (85 C to 40 C) 0.041 dB/C Gate Leakage Current (V = +10 V, V = 3.7 V) 1.3 mA D G Test conditions, unless otherwise noted: VD = 25 V, IDQ = 29 mA, T = +25C, CW Data Sheet Rev. B, February 2022 Subject to change without notice 2 of 24 www.qorvo.com