QPA4501 3 W, 28 V, 4.4 5.0 GHz GaN PA Module Product Overview The QPA4501 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications up to 3 W RMS at the device output covering frequency range from 4.4 to 5.0 GHz. The module is 50 input and output and requires minimal 36 Pad 6 x10mm Plastic QFN Package external components. The module is also compact and offers a much smaller footprint than traditional discrete component solutions. Key Features Operating Frequency Range: 4.45.0GHz The QPA4501 incorporates a Doherty final stage delivering high power added efficiency for the entire module up to Operating Drain Voltage: +28 V 3 W average power. 50 Input / Output Integrated Doherty Final Stage RoHS compliant. Gain at 1.25 W Avg.: 29.9 dB Power Added Efficiency at 1.25 W Avg.: 25.7% Power Added Efficiency at 3 W Avg.: 38% 6 x 10 mm Plastic Surface Mount Package Note: T = +25C, single-carrier, 20 MHz LTE signal with 7.8 dB PAR at 0.01% CCDF. Functional Block Diagram Applications 5G Massive MIMO W-CDMA / LTE Macrocell Base Station Driver Microcell Base Station Small Cell Final Stage Active Antenna General Purpose Applications Ordering Information Part No. Description QPA4501SB Sample Bag 5 Pieces QPA4501SR Short Reel 100 Pieces QPA4501TR13 13 Reel 2500 Pieces QPA4501EVB01 Tested 4.4 5.0 GHz EVB th Data Sheet Rev. C, Sep 8 , 2021 Subject to change without notice. 1 of 12 www.qorvo.com QPA4501 3 W, 28 V, 4.4 5.0 GHz GaN PA Module Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Units Parameter Min Typ Max Units Breakdown Voltage (BVDG) 120 V Gate Voltage (VG1) 2.6 V Gate Voltage (VG1,2,3) 7 to +2 V Gate Voltage (VG2) 4.2 V Drain Voltage (VD1,2,3) +40 V Gate Voltage (VG3) 2.6 V (1) RF Input Power +12 dBm Drain Voltage (V ) +28 V D1,2,3 VSWR Mismatch, P3dB Pulse Quiescent Current (I ) 50 mA DQ1 (10% Duty Cycle, 100 s 10:1 Quiescent Current (I ) 75 mA DQ3 Pulse Width), T = +25C Power Dissipation 3.8 W Power Dissipation 63 W Note: Electrical specifications are measured at specified test conditions. Notes: Specifications are not guaranteed over all recommended operating 1. Tested at 4.7 GHz, T = +25C, single-carrier, 20 MHz LTE signal conditions. with 7.8 dB PAR at 0.01% CCDF. 2. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions Min Typ Max Units Frequency Range 4.4 5.0 GHz Driver Quiescent Current (I ) 50 mA DQ1 Carrier Quiescent Current (I ) 75 mA DQ3 Gain PAVG = 31 dBm 26.0 29.9 dB Saturated Power (PSAT) Pulse (10% Duty Cycle, 500 s Width), PIN = 19 dBm 41.9 43.5 dBm Power Added Efficiency (PAE) PAVG = 31 dBm 19.8 25.7 % Raw ACLR P = 31 dBm 35.1 dBc AVG Test conditions unless otherwise noted: V =+28V, I = 50 mA, I = 75 mA, V = 4.2 V, T = +25C, using a single-carrier, 20 MHz LTE signal D1,2,3 DQ1 DQ3 G2 with 7.8 dB PAR at 0.01% CCDF on the reference design fixture. Thermal Information Parameter Conditions Values Units Peak IR Surface Thermal Resistance TCASE = +85C, TCH = 91C 1.5 C/W at Average Power ( ) CW: P = 4 W, P = 1.25 W JC DISS OUT Notes: 1. Based on expected carrier amplifier efficiency of Doherty. 2. P assumes 10% peaking amplifier contribution of total average Doherty rated power. OUT 3. Thermal resistance is measured to package backside. 4. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates th Data Sheet Rev. C, Sep 8 , 2021 Subject to change without notice. 2 of 12 www.qorvo.com