QPA9901 2110-2200MHz 4 W High-Efficiency Amplifier Product Overview The QPA9901 is a high-efficiency, linearizable power amplifier targeting Band 66 along with Band 1 small-cell wireless infrastructure systems. The product delivers high efficiency of 32% at +28dBm average output power, while providing excellent DPD linearized ACPR of -48dBc for signal bandwidths of up to 60MHz. The QPA9901 is housed in a 5x5mm SMT package. It is 16 Pad 5x5mm Package pin-to-pin compatible to QPA9903 (band 3 high-efficiency small cell PA). Key Features 21102200MHz Up to 60MHz IBW capability 36.5dB Gain typical 32% PAE at +28dBm power output Functional Block Diagram <-48dBc ACPR DPD linearized at +28dBm Pout 1.8V logic compatible PA ON/OFF control On chip ESD protection Applications 3GPP Band 66 along with Band 1 Small Cells M-MIMO Repeaters / DAS Mobile Infrastructure General Purpose Wireless Top View Ordering Information Part No. Description QPA9901TR13 2500 on reel QPA9901EVB-01 2110-2200 MHz EVB th Datasheet, Aug. 10 , 2021 Subject to change without notice 1 of 14 www.qorvo.com QPA9901 2110-2200MHz 4 W High-Efficiency Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +125C Device Voltage (VCC) +4.75 +5 +5.25 V (1) RF Input Power, Pulsed CW, 50 +10 dBm TCASE 40 +85 C 6 Device Voltage (VCC) +5.5 V Tj for >10 hours MTTF +175 C Exceeding any one or a combination of the Absolute Maximum Rating Electrical specifications are measured at specified test conditions. conditions may cause permanent damage to the device. Extended Specifications are not guaranteed over all recommended operating application of Absolute Maximum Rating conditions to the device may reduce conditions. device reliability. Note: 1. 2110-2200 MHz, Pulsed CW, 10% duty cycle, 100us period. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 2110 2200 MHz Test Frequency 2140 MHz Gain Pout=+28dBm 34 36.5 dB Input Return Loss -13 dB Output P3dB 100 s/1 ms, 10% duty cycle 35 +35.6 dBm (2) Power Added Efficiency Pout=+28dBm 29 32 % (2) ACPR(Uncorrected) Pout=+28dBm -38 -34 dBc (3) ACPR(Uncorrected) Pout=+28dBm -33 dBc (2) ACPR(Corrected) Pout=+28dBm -48 dBc Quiescent Current, ICQ Pins 12, 14 and 16 93 mA Total Operating Current Pins 5, 12, 14 and 16, Pout=+28dBm 394 mA Thermal Resistance, Junction to case 24.7 C/W jc V High 1.17 1.8 V V EN CC VEN Low 0 0 0.5 V 2nd Harmonic Pout=+28dBm -45 dBc 3rd Harmonic Pout=+28dBm -60 dBc Notes: 1. Test conditions unless otherwise noted: All V & V =+5.0V, V = +1.8V, Temp=+25C, 50 system. CC BIAS EN 2. LTE, 20 MHz E-UTRA Test Model 1.1 or 3.1, PAR = 8.5 dB at 0.01% Probability 3. LTE, 20 MHz x 3 E-UTRA Test Model 1.1 or 3.1, PAR = 8.5 dB at 0.01% Probability Power Amplifier Enable Logic Table Parameter High Low V Power Amplifier ON Power Amplifier OFF EN th Datasheet, Aug. 10 , 2021 Subject to change without notice 2 of 14 www.qorvo.com