X-On Electronics has gained recognition as a prominent supplier of QPB9324SR RF Front End across the USA, India, Europe, Australia, and various other global locations. QPB9324SR RF Front End are a product manufactured by Qorvo. We provide cost-effective solutions for RF Front End, ensuring timely deliveries around the world.

QPB9324SR Qorvo

QPB9324SR electronic component of Qorvo
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Part No.QPB9324SR
Manufacturer: Qorvo
Category: RF Front End
Description: RF Front End 3.4-3.6GHz Switch LNA Module
Datasheet: QPB9324SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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RoHS - XON
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Operating Frequency
Operating Supply Voltage
Maximum Operating Temperature
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NF - Noise Figure
Operating Supply Current
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Series
Technology
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Gain
Development Kit
Hts Code
Minimum Operating Temperature
P1db - Compression Point
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We are delighted to provide the QPB9324SR from our RF Front End category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPB9324SR and other electronic components in the RF Front End category and beyond.

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QPB9324 High Power Switch LNA Module Product Overview The Qorvo QPB9324 is a highly integrated front-end module targeted for TDD macro or picocell base stations. The LNA switch module integrates RF functional blocks such as a pin-diode based high power switch capable of handling up to 52 W with an LTE signal (8 dB PAR) along with two LNA stages. Further integration is also implemented where the pin diode driver and dc-dc converter circuits are implemented inside the module to enable only the need for an external 5 V power supply. The 16 Pin 8mmx8mm leadless SMT Package control voltage for the switch and gain control. mode is with 3.3 V logic. Key Features The QPB9324 can be utilized across the 3.4-3.6 GHz range 3.4-3.6 GHz frequency range to provide 1.2 dB noise figure for operation in the receive Integrates a high-power switch, two LNA stages, pin mode and 0.5 dB insertion loss in the transmit mode. The diode driver circuits, and dc converter LNAs utilize Qorvos high performance E-pHEMT process while the switch allows for power levels up to 330 W peak Ideal for TDD systems with an isolator power to be routed to an external load termination. Only requires a 5 V supply with 3.3 V logic control Max RF Input power: 52 W Pavg (8 dB PAR) The QPB9324 is packaged in a RoHS-compliant, compact 33.8 dB gain 8x8 mm surface-mount leadless package. The switch LNA 1.2 dB noise figure module is targeted for wireless infrastructure applications configured for TDD-based architectures. -0.6 dBm IIP3 (Rx mode) 0.5 dB Insertion Loss (Tx mode) Compact package size, 8x8 mm Functional Block Diagram Pin 1 Reference Mark Applications Package Topside 1 12 ANT RXOUT Wireless Infrastructure LNA Macro or picocell base stations 2 11 NC NC TDD-based architectures 10 T/R 3 CB LNA DC-DC Conversion Ordering Information 4 9 CA Vcc Exposed Part No. Description Backside Pad GND QPB9324TR13 2500 pcs on a 13 reel QPB9324EVB Evaluation board Top View Datasheet, Rev. I, February 25, 2020 Subject to change without notice 1 of 12 www.qorvo.com 5 16 LA TERM 6 15 LB NC 7 14 NC DA 8 13 NC DB QPB9324 High Power Switch LNA Module Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature -50 to 150C V +4.75 +5 +5.25 V CC Operating Temperature +115C T/R Logic Low Voltage 0 0.8 V V +6 V T/R Logic High Voltage 2.0 3.6 V CC (1) RF at ANT (Tx Mode), 10sec. +47.2 dBm TCASE 40 +105 C (1) 6 (1) RF at ANT (Tx Mode), Indefinitely +44.2 dBm Tj for >10 hours MTTF +190 C (1) Notes: RF at ANT (Rx Mode), Indefinitely +20 dBm 1. For RX Mode operation (2) Electrical specifications are measured at specified test conditions. RF at ANT (Rx Mode), WCDMA PAR=10dB +26 dBm Specifications are not guaranteed over all recommended operating (2) RF at ANT (Rx Mode), CW +29 dBm conditions. (3) RF at ANT (Rx Mode), 1 s pulse 1% duty cycle +31.5 dBm Notes: 1. LTE 1ch, 8 dB PAR, 88% duty cycle, 10.4 s repetition time, T = +100C CASE 2. 12 hours, T = +25 C CASE 3. 2 hour x 2 cycles, T = +60 C & then 2 hour x 3 cycles, T = +75 C CASE CASE Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: VCC = +5.0 V, Temp.=+25C, 50 system Parameter Conditions Min Typ Max Units Operational Frequency Range 3400 3600 MHz Rx mode Gain 33.8 dB Gain Flatness Rx mode 0.5 dB Rx mode Noise Figure 1.2 dB Input IP3 Rx mode, Pin/tone = -33dBm, f = 1MHz -0.6 dBm Input P1dB Rx mode -15.4 dBm Rx mode Input Return Loss (ANT) 26 dB Output Return Loss (Rx Out) Rx mode 23 dB Rx mode Reverse Isolation 58 dB Insertion Loss Tx mode 0.5 dB Input P0.1dB Tx mode 46.6 dBm Tx mode Return Loss (ANT, TERM) 27 dB Operating Current Rx mode 240 mA Tx mode Operating Current 145 mA Switching Time (ANT to Rx Out) 2 s Reaching RF full output less 0.1dB after T/R command Switching Time (ANT to Term) 1 s Reaching RF full output less 0.5dB after Wakeup Time (ANT to Rx Out/Term) 1 sec. DC turn on (1) (2) In Band Spurious Emission Rx Mode at Rx out with Pin = -49dBm -85 dBc (3) Out of Band Emissions Rx Mode at Rx out from DC to 12275MHz -65 dBm Thermal Resistance Rx mode 22 C/W Thermal Resistance Tx mode 22 C/W Notes: 1. Pin is a CW signal swept from 3.4 to 3.6GHz. Specification refers to any mixing product that occurs in 3.4 to 3.6GHz band. 2. Follow Qorvo EVB layout for lowest spur level, any deviation may increase spur level. 3. Measure Pout with IBW = 4.5MHz over frequency range with no input power applied. Datasheet, Rev. I, February 25, 2020 Subject to change without notice 2 of 12 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
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TriQuint Semiconductor, Inc

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