QPC1005 0.15 2.8 GHz 50 W GaN SPDT Switch Product Overview Qorvos QPC1005 is a Single-Pole, DoubleThrow (SPDT) switch fabricated on Qorvos QGaN25 0.25um GaN on SiC production process. Operating from 0.15 to 2.8 GHz, the QPC1005 typically supports 50 W input power handling at control voltages of 0/40 V for both CW and pulsed RF operations. This switch maintains low insertion loss less than 0.7 dB and greater than 30 dB isolation, making it ideal for high power 4mm x 4mm 24 Lead OVM QFN switching applications across both defense and commercial platforms. Key Features QPC1005 is offered in a 4 x 4 mm plastic overmolded QFN SPDT package. Frequency Range: 0.15 to 2.8 GHz Input Power: 50 W Lead-free and RoHS compliant Insertion Loss: < 0.7 dB Isolation: >30 dB Typical Switching Speed: 30 ns Control Voltages: 0 V/40 V Redundant Control Lines Package Dimensions: 4 x 4 x 0.85 mm Performance is typical across frequency. Please reference electrical specification table and data plots Functional Block Diagram for more details. Applications Commercial and Military Radar Land Mobile Radios Military Communications Radios Electronic Warfare Test Instrumentation General Purpose Ordering Information Part No. Description QPC1005 0.52.8 GHz 50 W SPDT Switch QPC1005PCB4B01 QPC1005 Evaluation Board Data Sheet Rev D. July 15, 2019 Subject to change without notice 1 of 15 www.qorvo.com QPC1005 0.15 to 2.8 GHz 50 W GaN SPDT Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ. Max Units Control Voltage (VC) 50 V V 0/-40 V C1 1.5 / +1.5 mA Control Current (IC) V -40/0 V C2 Power Dissipation 12 W Temperature Range -40 +25 +85 C Electrical specifications are measured at specified test conditions. RF Input Power, CW, 50 , T = 25 C 60 W Specifications are not guaranteed over all recommended operating Mounting Temperature (30 sec) 260 C conditions. Storage Temperature 40 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Thermal and Reliability Information Parameter Test Conditions Value Units (1,2) Thermal Resistance (JC) 5.23 C/W T = 85 C, V = 0 V, V = -40 V, Freq. = 2.8 GHz BASE C1 C2 (3) (1,2) P = 60 W, P = 6.5 W, CW IN DISS Channel Temperature (TCH) 119 C Notes: 1. Measured to the back of the package. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates 3. This is a total PDISS in the FETs. Data Sheet Rev D. July 15, 2019 Subject to change without notice 2 of 15 www.qorvo.com