QPA0163LPCK401 Qorvo

QPA0163L 1001300MHz Cascadable SiGe HBT Amplifier Product Overview The QPA0163L is a high performance SiGe HBT MMIC amplifier. An internal temperature compensation circuit allows operation from a supply voltage as low as +2.5V. The QPA0163L has been characterized at VS=+3V for low power and VS=+4 V for medium power applications. 6 Lead SOT-363 Package Two DC-blocking capacitors, bypass capacitors and an optional RF choke complete the circuit required for 800 1300MHz operation of this internally matched 50 ohm Key Features device. 100 to 1300MHz Operation The QPA0163L is assembled in an industry standard SOT- Internally Matched To 50 800MHz to 1300MHz 363 package that is lead-free and RoHS-compliant. Single Positive Voltage Supply Low Current Draw: 14mA at V =+3V S Input IP3: +11.1dBm typical at 900MHz Functional Block Diagram Low Noise Figure: 1.5dB Typical at 900MHz Internal Temperature Compensation Lead-free/RoHS-compliant SOT-363 Package Applications Receivers, GPS, RFID Cellular, Fixed Wireless, Land, Mobile Top View Ordering Information Part No. Description QPA0163LSQ 25 Piece Sample Bag QPA0163LSR 100 Pieces on 7 Reel QPA0163LTR7 3000 pieces on a 7 reel QPA0163LPCK401 8001300MHz EVB with 5 Pc. Sample Bag Data Sheet, December 2019 Subject to change without notice 1 of 8 www.qorvo.com QPA0163L 100 1300MHz Cascadable SiGe HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temp 55 to +150C Operating Temperature 40 +105 C Device Voltage (VD) +5 V Junction Temperature (TJ) +125 C Electrical specifications are measured at specified test conditions. Device Current (ID) 45 mA Specifications are not guaranteed over all recommended operating RF Input Power (Z = 50) +15dBm L conditions. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Bias Conditions should also satisfy the following expression: I x V < (T -T ) / R D D JUNCTION LEAD TH Electrical Specifications V = +3V V = +4V S S Parameter Conditions Min Typ Max Min Typ Max Units 800MHz 16.5 17.7 Small Signal Gain 900MHz 15.7 16.8 dB 1000MHz 14.9 16.0 800MHz +6.0 +13.2 Output Power at 1dB Compression 900MHz +6.4 +13.7 dBm 1000MHz +6.8 +14.0 800MHz +9.6 +12.7 Input Third Intercept Point 900MHz +11.1 +14.2 dBm 1000MHz +12.1 +15.3 Input Return Loss, S11 900MHz 15.4 12.8 dB Output Return Loss, S22 900MHz 9.0 9.4 dB Reverse Isolation, S12 900MHz 25.0 24.6 dB 800MHz 1.45 2.7 Noise Figure 900MHz 1.48 2.6 dB 1000MHz 1.58 2.5 Device Operating Voltage +2.5 +4.5 +2.5 +4.5 V Device Operating Current 13.8 30.7 mA Thermal Resistance 150 150 C/W Notes: 1. Test conditions unless otherwise noted: OIP3 Tone Spacing=1MHz, P per tone = -13dBm, 50 system, Temp.=+25C. OUT Data Sheet, December 2019 Subject to change without notice 2 of 8 www.qorvo.com