QPA1006D 10.712.7 GHz 35 Watt GaN Amplifier Product Overview Qorvos QPA1006D is a wide band power amplifier MMIC fabricated on Qorvos production 0.15 um GaN on SiC process (QGaN15). Covering 10.712.7 GHz, the QPA1006D provides > 35 Watts of saturated output power and > 17 dB of large-signal gain while achieving > 39% power-added efficiency. The QPA1006D RF input port is DC coupled to ground for optimum ESD performance. The QPA1006D RF ports have DC blocking capacitors and are matched to 50 ohms. The QPA1006D can support a wide range of operating Key Features conditions, including CW operation, making it well-suited for both commercial and military systems. Frequency Range: 10.7 12.7 GHz P (P =29 dBm): > 46 dBm SAT IN Lead-free and RoHS compliant. PAE (P =29 dBm): > 39 % IN Power Gain (PIN=29 dBm): > 17 dB Small Signal Gain: > 21.5 dB Bias: VD = 20 V, IDQ = 1200 mA Die Dimensions: 6.09 x 4.24 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Satellite Communications 2 3 4 5 6 7 Radar Point to Point Communications DET 1 8 Ordering Information DET Part No. Description 14 13 12 11 10 9 10.712.7 GHz 35 W GaN Amplifier QPA1006D (10 Pcs.) QPA1006DEVBV1 Evaluation Board for QPA1006D Data Sheet Rev. D, January 2021 Subject to change without notice 1 of 17 www.qorvo.com QPA1006D 10.7 12.7 GHz 35 Watt GaN Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 20 V Gate Voltage Range (VG) -4 V to 0 V Drain Current (IDQ) 1200 mA Drain Current (ID1/ID2) (T=85 C) 0.83 / 7.2 A Operating Temperature 40 to +85 C Gate Current (I ) See plot pg. 12 Electrical specifications are measured at specified test G conditions. Specifications are not guaranteed over all Power Dissipation (PDISS), 85 C 118.9 W recommended operating conditions. Input Power (PIN), 50 , CW, 35 dBm V =20 V, I =1200 mA, 85 C D DQ Input Power (P ), 3:1 VSWR, CW, IN 35 dBm VD=20 V, IDQ=1200 mA, 85 C Soldering Temperature (30 seconds, 320 C maximum) Storage Temperature -55 to +125 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Min Typ Max Units Operational Frequency 10.7 12.7 GHz Output Power (PIN = 29 dBm) 10.7 GHz 47.1 dBm 11.7 GHz 46.9 dBm 12.7 GHz 46.1 dBm Power Added Efficiency (P = 29 dBm) 10.7 GHz 41.0 % IN 11.7 GHz 42.5 % 12.7 GHz 39.4 % Small Signal Gain 10.7 GHz 24.0 dB 11.7 GHz 22.7 dB 12.7 GHz 21.6 dB Input Return Loss 10.7 GHz 26 dB 11.7 GHz 16 dB 12.7 GHz 17 dB Output Return Loss 10.7 GHz 7 dB 11.7 GHz 9 dB 12.7 GHz 5 dB Intermodulation Level (IMD3) (Pout/Tone = 38 dBm) -26 dBc ND 2 Harmonic Level (Fundamental P = 29 dBm) -32 dBc IN Output Power Temp. Coeff. (85C to25 C, PIN = 29 dBm) -0.022 dB/C Sm. Sig. Gain Temp. Coefficient (85 C to 40 C) -0.067 dB/C Test conditions, unless otherwise noted: T = 25 C, VD = 20 V, IDQ = 1200 mA Data Sheet Rev. D, January 2021 Subject to change without notice 2 of 17 www.qorvo.com