PA2 IN ASW RX GND GND PA1 OUT LNA IN GND LNA BIAS PA1 IN LNA VCC GND VDIG NC CTL5 RFMD + TriQuint = Qorvo RFFM6901 RFFM6901 2.8V to 4.2V, 915MHz ISM Band Transmit/Receive Module with Diversity Switch Package: LGA, 32-pin, 6.0mm x 6.0mm The RFFM6901 is a single-chip front end module (FEM) for application in the 868MHz and 915MHz ISM Bands. The RFFM6901 addresses the Features need for aggressive size reduction for typical portable equipment RF Tx Output Power: 30dBm front end designs and greatly reduces the number of components Separate Rx/Tx 50 Transceiver outside of the core chipset thus minimizing the footprint and assembly Interface cost of the overall solution. The RFFM6901 contains an integrated 1W Antenna Diversity Switch PA, dual port diversity antenna switch, LNA with bypass mode, and LNA with Bypass Mode matching components. The RFFM6901 is packaged in a 32-pin, 6.0mm x 6.0mm x 1.2mm over-molded laminate package. Applications Wireless Automated Metering 915 MHz TX only SAW 2 BPF From SAW 1 XCVR BPF Wireless Alarm Systems 32 31 30 29 28 27 26 Portable Battery Powered GND 1 25 GND Equipment PA1 RFIO 2 24 PA VCC1 PA2 GND 3 23 PA VCC2 Smart Energy NC 4 LPF 22 GND 868MHz/915MHz ISM Band GND 5 21 ANT1 Application CTL1 6 20 GND 7 19 ANT2 CTL2 Single Chip RF Front End Module CTL 8 LOGIC LNA 18 GND CTL3 CTL4 9 17 GND 10 11 12 13 14 15 16 SAW 3 BPF Functional Block Diagram Ordering Information RFFM6901SB Standard 5-piece bag RFFM6901SQ Standard 25-piece bag RFFM6901SR Standard 100-piece reel RFFM6901TR13 Standard 2500-piece reel RFFM6901PCK-410 Fully assembled evaluation board w/ 5-piece bag Revision DS20170825 1 of 11 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com RFMD + TriQuint = Qorvo Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Voltage 5.25 VDC Storage Temperature Range -40 to +150 C RFMD Green: RoHS status based on EU Operating Temperature Range -40 to +85 C Directive 2011/65/EU (at time of this document revision), halogen free per IEC Maximum Input Power to PA, pin 30, 2 (no damage) +5 dBm 61249-2-21, < 1000ppm each of antimony Maximum Input Power to PA, pin 26(no damage) +23 dBm trioxide in polymeric materials and red phosphorus as a flame retardant, and Maximum Input Power to LNA, pin 19, 21 (no damage) +10 dBm <2% antimony in solder. Moisture Sensitivity Level MSL3 Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Nominal Operating Parameters Specification Parameter Unit Condition Min Typ Max Overall Active Frequency 868 902 to 928 MHz PA and LNA RF Port Impedance 50 ESD, Human Body Model 500 V RF Pins 500 V All Other Pins ESD, Charge Device Model 500 V RF Pins 500 V All Other Pins PA Section Transmit Mode 4V (High Bias) PA V = V = 4.0V, LNAV = 0V, CTL1 = CTL4 = CTL5 = 3.8V, CC DIG CC CTL2 = CTL3 = 0V. Power Supply Operation Voltage- 3.8 4 4.2 V PA V CC High Input Power 0 5 dBm Pin 30 CW Output Power-near saturation 31 31.5 dBm (ANT1/2) at 4.0V Output Power (ANT1/2) at 4.0V 30 30.5 dBm Thermal Resistance 39.83 C/W V = V = 4.0V, LNAV = 0V, CTL1 = CTL4 = CTL5 = 3.8V, CC DIG CC CTL2 = CTL3 = 0V, POUT = 30.1dBm, Modulation = CW, Freq = 902MHz, DC = 100%, T = 85C 1W Current (ANT1/2) at 4.0V at 600 700 mA P = 30dBm OUT 1/2W Current (ANT1/2) at 4.0V at 415 450 490 mA POUT = 27dBm 1/4W Current (ANT1/2) at 4.0V at 310 340 370 mA P = 24dBm OUT Large Signal Gain Overall High 27 30 33 dB Bias (ANT1/2) at 4.0V Large Signal Gain Overall Low Bias 22 25 28 dB (ANT1/2) at 4.0V Revision DS20170825 1 of 11 Disclaimer: Subject to change without notice 2015 RF Micro Devices, Inc. www.rfmd.com / www.qorvo.com