SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Ampli- SPF5189Z fier 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Features The SPF5189Z is a high performance pHEMT MMIC LNA designed for Ultra-Low Noise Figure=0.60dB at 900MHz operation from 50MHz to 4000MHz. The on-chip active bias network pro- vides stable current over temperature and process threshold voltage vari- Gain=18.7dB at 900MHz ations. The SPF5189Z offers ultra-low noise figure and high linearity High Linearity: OIP =39.5dBm 3 performance in a gain block configuration. Its single-supply operation and at 1960MHz integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic P =22.7dBm at 1960MHz 1dB range receivers. Single-Supply Operation: 5V at Optimum Technology I =90mA Matching Applied DQ GaAs HBT Flexible Biasing Options: 3V to GaAs MESFET 5V, Adjustable Current InGaP HBT Broadband Internal Matching SiGe BiCMOS Si BiCMOS Applications SiGe HBT GaAs pHEMT Cellular, PCS, W-CDMA, ISM, WiMAX Receivers Si CMOS Si BJT PA Driver Amplifier GaN HEMT Low Noise, High Linearity Gain InP HBT Block Applications RF MEMS LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 18.7 dB 0.9GHz 11.3 12.8 14.3 dB 1.96GHz Output Power at 1dB Compression 22.4 dBm 0.9GHz 20.722.7 dBm1.96GHz Output Third Order Intercept Point 38.5 dBm 0.9GHz 36.0 39.5 dBm 1.96GHz Noise Figure 0.55 dB 0.9GHz 0.8 1.1 dB 1.96GHz Input Return Loss 17.5 dB 0.9 GHz 14.5 18.5 dB 1.96GHz Output Return Loss 16.0 dB 0.9GHz 11.0 15.0 dB 1.96GHz Reverse Isolation 24.0 dB 0.9GHz 18.0 dB 1.96GHz Device Operating Voltage 5 5.25 V Device Operating Current 75 90 105 mA Quiescent Thermal Resistance 65 C/W Junction to lead Test Conditions: V =5V, I =90mA, TL=25C, OIP Tone Spacing=1MHz, P per tone=0dBm D DQ 3 OUT Z =Z =50 , 25C, Application Circuit Data S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110606 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 11SPF5189Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (l ) 120 mA cause permanent damage to the device. Extended application of Absolute Maximum D Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- Max Device Voltage (V)5.5 V D tions is not implied. Max RF Input Power 27 dBm The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Max Dissipated Power 660 mW infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Max Junction Temperature (T ) 150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- J cation circuitry and specifications at any time without prior notice. Operating Temperature Range (T ) -40 to + 85 C L RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric Max Storage Temperature -65 to +150 C materials and red phosphorus as a flame retardant, and <2% antimony in solder. ESD Rating - Human Body Model Class 1B (HBM) Moisture Sensitivity Level (MSL) MSL 2 Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Typical RF Performance - Application Circuit Data with V =5V, I =90mA D D Parameter Unit 0.8 0.9 1.0 1.7 1.8 1.9 2.0 2.1 2.2 GHz GHz GHz GHz GHz GHz GHz GHz GHz Small Signal Gain dB 19.6 18.7 17.9 13.8 13.5 12.9 12.7 12.2 11.9 Noise Figure dB 0.52 0.55 0.79 0.75 0.81 0.83 0.90 0.91 0.98 Output IP3 dBm 38.4 38.5 39.0 39.2 39.5 39.5 39.8 39.8 39.9 Output P1dB dBm 22.3 22.4 22.5 22.6 22.6 22.7 22.7 22.7 22.7 Input Return Loss dB 17.1 17.5 17.5 17.5 17.5 18.5 18.5 18.5 18.0 Output Return Loss dB 16.0 16.0 15.5 14.0 14.0 14.5 15.0 15.5 16.0 Reverse Isolation dB 24.5 24.0 23.0 18.5 18.5 18.0 18.0 17.5 17.0 Test Conditions: V =5V, I =90mA, OIP Tone Spacing=1MHz, P per tone=0dBm, T =25C, Z =Z =50 D DQ 3 OUT L S L 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 11 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110606