TGA2962 220 GHz 10 Watt GaN Amplifier Product Overview Qorvo s TGA2962 is a wideband power amplifier fabricated on Qorvo s QGaN15 GaN on SiC process. The TGA2962 operates from 2 to 20 GHz, providing 10 W of saturated power with 13 dB large signal gain and 22 % power-added efficiency at 22 V drain bias. RF ports are matched to 50 , including integrated DC blocking capacitors and a RF choke. This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost. TGA2962 is ideally suited for wideband communications systems, Key Features electronic warfare, test instrumentation, and radar applications, across both military and commercial markets. Frequency Range: 220 GHz P (P =27 dBm): > 40 dBm SAT IN TGA2962 is 100% DC and RF tested on-wafer to ensure PAE (P =27 dBm): > 22 % IN compliance to electrical specifications. Power Gain (PIN=27 dBm): 13 dB Small Signal Gain: 20 dB Lead free and RoHS compliant. Bias: VD = 22 V, IDQ = 1680 mA Die Dimensions: 3.24 x 3.24 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram VG VD1 VD2 Applications Communication Systems Electronic Warfare Radar Test Equipment Ordering Information RF IN RF OUT Part No. Description Top View 2 20 GHz 10 Watt GaN Amplifier TGA2962 (10 Pcs.) TGA2962EVB Evaluation Board for TGA2962 Data Sheet Rev. D, August 2021 Subject to change without notice 1 of 27 www.qorvo.com TGA2962 2 20 GHz 10 Watt GaN Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 29.5 V Drain Voltage (VD) 22 V Gate Voltage Range (VG) 5 V to 0 V Drain Current (IDQ) 1680 mA Drain Current (ID) 2848 mA Operating Temperature 40 to +85 C Electrical specifications are measured at specified test Gate Current (IG) 10 mA conditions. Specifications are not guaranteed over all Power Dissipation (PDISS), 85 C 45 W recommended operating conditions. Input Power (PIN), 50 , 33 dBm V =22 V, I =1.68 A, 85 C D DQ Input Power (P ), 3:1 VSWR, IN 32 dBm VD=22 V, IDQ=1.68 A, 85 C Soldering Temperature (30 s max.) 320 C Storage Temperature 55 to +125 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Data Sheet Rev. D, August 2021 Subject to change without notice 2 of 27 www.qorvo.com