TGA4549-SM 21.2 23.6 GHz 10 W GaN Power Amplifier Product Overview Qorvos TGA4549-SM is a high frequency, high power MMIC amplifier fabricated on Qorvos production 0.15um GaN on SiC process (QGaN15). The TGA4549-SM operates from 21.2 23.6 GHz and typically provides 10 W saturated output power with power-added efficiency of 20% and large-signal gain of 17 dB. This combination of high frequency performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The TGA4549-SM also has an 24-Lead 5.0x5.5x1.7mm Air Cavity Laminate Package integrated power detector to support system diagnostics and other needs. The TGA4549-SM is offered in a small 5x5.5 mm surface Key Features mount package, matched to 50 with integrated DC blocking capacitors on both RF ports simplifying system Frequency Range:21.2 23.6 GHz integration. The frequency coverage and operational PSAT (PIN=23 dBm): 40 dBm flexibility allows it support satellite communication as well PAE (P =23 dBm): 20 % IN as point to point data links. Small Signal Gain:22dB The TGA4549-SM is 100% DC and RF on-wafer tested to Large Signal Gain: 17 dB ensure compliance to electrical specifications. Integrated Power Detector Bias: VD1= VD2 = VD3 =+28V, ID1 + ID2 + ID3 = 300mA Lead-free and RoHS compliant. Package Dimensions: 5.0 x 5.5 x 1.7 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Point-to-Point Radio Satellite Communications Ordering Information Part No. Description TGA4549-SM 21.2 23.6 GHz 10 W GaN PA TGA4549-SMTR7X 200 pieces on a 7 reel (standard) TGA4549-SMTR7 500 pieces on a 7 reel TGA4549-SMEVB01 Evaluation Board Data Sheet Rev. C, May 27, 2020 Subject to change without notice 1 of 17 www.qorvo.com TGA4549-SM 21.2 23.6 GHz 10 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Drain Voltage (VD) 29.5 V Drain Voltage (V ) +28 V D Gate Voltage Range (VG) -8 to 0 V Drain Current, Quiescent (IDQ) 300 mA Drain Current Stage 1 (ID1), Top or Bottom 500 mA Drain Current Stage 2 (I ), Top or Bottom 500 mA D2 Drain Current, RF (ID Drive) See chart page 5 mA Drain Current Stage 3 (I ), Top and Bottom 2 A D3 Gate Voltage Typ. Range (V ) 2.1 to -2.8 V G Gate Current (I ), See chart G Gate Current, RF (IG Drive) See chart page 5 mA RF Input Power, CW, 50, T=25C 26 dBm Operating Temp. Range 40 +25 +85 C Dissipated Power (PDISS), CW, 85C 45 W Electrical specifications are measured at specified test conditions. Reference Diode Current (Iref) 4 mA Specifications are not guaranteed over all recommended operating Detector Diode Current (Idet) 4 mA conditions. Storage Temperature 55 to +150C Mounting Temperature (30 seconds) 260C Gate Current Maximum vs. T vs. Stage CH 100 Exceeding any one or a combination of the Absolute Maximum Rating Total 90 conditions may cause permanent damage to the device. Extended Stage 3 application of Absolute Maximum Rating conditions to the device may 80 Stage 2 reduce device reliability. 70 Stage 1 60 50 40 30 20 10 0 110 120 130 140 150 160 170 180 0 Channel Temperature ( C) Electrical Specifications (1) (2) Parameter Conditions Min Typ Max Units Operational Frequency Range 21.2 23.6 GHz Small Signal Gain, S21 22 dB Input Return Loss, IRL 9 dB Output Return Loss, ORL 12 dB Output Power at Saturation, PSAT PIN = +23 dBm 40 dBm Power Added Efficiency, PAE PIN = +23 dBm 20 % Third Order Intermodulation, IM3 POUT = +34 dBm/tone 25 dBc S21 Temperature Coefficient T = (85 (40)) C 0.03 dB/C diff P Temperature Coefficient T = (85 (40)) C, P = +23 dBm 0.02 dBm/C SAT diff in Gate Leakage V = +28 V, V = -5 V -8 -1 0 mA D G Notes: 1. Test conditions unless otherwise noted: CW, V = V = V = 28V, I + I + I = 300mA, adjusting V = V = V , T =+25C, Z =50 D1 D2 D3 D1 D2 D3 G1 G2 G3 BASE 0 2. T is back side of package BASE Data Sheet Rev. C, May 27, 2020 Subject to change without notice 2 of 17 www.qorvo.com I Maximum (mA) G