TGS2352-2-SM 0.5 - 12 GHz High Power SPDT Reflective Switch Product Overview Qorvos TGS2352-2-SM is a single-pole, double-throw (SPDT) reflective switch packaged in a 4x4mm ceramic, air-cavity QFN. Fabricated on Qorvos QGaN25 0.25um GaN on SiC production process, the TGS2352-2-SM operates from 0.5- 12GHz and can swtich up to 20W with low insertion loss and high isolation. QFN 4x4 mm 22L The TGS2352-2-SM performance allows it to be used in a variety of applications across commercial and military markets low and high power. Lead-free and RoHS compliant. Key Features SPDT, Reflective Frequency Range: 0.5 to 12 GHz Input Power: up to 20 W Insertion Loss: <1 dB Isolation: 35 dB Typical Switching Speed: <35 ns Control Voltages: 0 V/40 V Dimensions: 4.0 x 4.0 x 1.42 mm Performance is typical across frequency. Please Functional Block Diagram reference electrical specification table and data plots for more details. Vc1 J2 - RF Out 1 21 18 Applications Commercial and Military Radar Communications 3 J1 RF In Electronic Warfare Test Instrumentation General Purpose 7 10 Vc2 J3 - RF Out 2 Ordering Information Part No. Description 0.512 GHz High Power SPDT TGS2352-2-SM Reflective Switch TGS2352-2-SMEVB2 TGS2352-2-SM Evaluation Board Data Sheet Rev. F, Sept. 08, 21 Subject to change without notice 1 of 10 www.qorvo.com TGS2352-2-SM 0.5 to 12 GHz High Power SPDT Reflective Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Control Voltage (V ) 50 V V -40/0 V C C1 V 0/-40 V Control Current (I ) 1.5 / 6 mA C2 C I / I 0.25 to 0.1 mA C1 C2 Power Dissipation 5 W Temperature Range -40 +25 +85 C RF Input Power, CW, 50 , T = 25 C 44 dBm Electrical specifications are measured at specified test conditions. Mounting Temperature (30 sec) 260 C Specifications are not guaranteed over all recommended operating conditions. Storage Temperature 40 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 0.5 12 GHz Insertion Loss On-State <1 dB Input Return Loss Common Port On-State 15 dB Output Return Loss Switch Port On-State 15 dB Isolation 35 dB Off-State Output Return Loss Isolated Port Off-State 3 dB Input Power CW 43 dBm Insertion Loss Temperature Coefficient -0.004 dB/C Switching Speed On 31 ns Switching Speed Off 18 ns Notes: 1. Test conditions unless otherwise noted: Temp= +25C. V = 40/0 V, V = 0/40 V, see Function Table on page 6 C1 C2 Thermal and Reliability Information Parameter Test Conditions Value Units (1,2) Thermal Resistance ( ) 22.38 C/W JC TBASE = 85 C, VC1 = 0 V, VC2 = -40 V, Freq. = 4 GHz, CW P = 43 dBm, P = 41.95 dBm, P = 4.29 W IN OUT DISS (1,2) Channel Temperature (TCH) 181 C (1) Thermal Resistance ( ) 22.83 C/W JC T = 85 C, V = 0 V, V = -40 V, Freq. = 5 GHz, CW BASE C1 C2 (1,2) PIN = 42.5 dBm, POUT = 41.2 dBm, PDISS = 4.6 W Channel Temperature (T ) 190 C CH (1,2) Thermal Resistance ( ) 22.48 C/W JC T = 85 C, V = 0 V, V = -40 V, Freq. = 8 GHz, CW BASE C1 C2 (1,2) PIN = 41 dBm, POUT = 39.15 dBm, PDISS = 4.36 W Channel Temperature (TCH) 183 C (1,2) Thermal Resistance (JC) 21.98 C/W T = 85 C, V = 0 V, V = -40 V, Freq. = 10 GHz, CW BASE C1 C2 (1,2) P = 40.5 dBm, P = 38.5 dBm, P = 4.14 W IN OUT DISS Channel Temperature (TCH) 176 C (1,2) Thermal Resistance (JC) 22.67 C/W TBASE = 85 C, VC1 = 0 V, VC2 = -40 V, Freq. = 12 GHz, CW (1,2) P = 40 dBm, P = 37.4 dBm, P = 4.5 W IN OUT DISS Channel Temperature (TCH) 187 C Notes: 1. Measured to the back of the package. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Data Sheet Rev. F, Sept. 08, 21 Subject to change without notice 2 of 10 www.qorvo.com