TGS2354-SM 0.5-6 GHz 40 Watt GaN Switch Product Overview Qorvos TGS2354SM is a Single-Pole, Double-Throw (SPDT) reflective switch fabricated on Qorvos QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2354SM typically supports up to 40W input power handling at control voltages of 0/40 V. This switch maintains low insertion loss of 1.1 dB or less and greater than 25dB isolation, making it 22 Pad 4x4mm QFN Package ideal for high power switching applications across both defense and commercial platforms. Key Features The TGS2354-SM is available in a 4x4 mm air-cavity QFN Frequency Range: 0.56 GHz package comprised of an aluminum-nitride base with a LCP Insertion Loss: < 1.1 dB epoxy-sealed lid. This, along with the minimal DC power Power Handling: 46 dBm (P ) 0.1dB consumption, allows for easy system integration. Isolation: > 25 dB typical Lead-free and RoHS compliant. Return Loss: > 15 dB Control Voltages: 0 V/40 V Switching Speed: < 50 ns Reflective Switch Package Dimensions: 4.0 x 4.0 x 1.42 mm Functional Block Diagram Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Applications Commercial and Military Radar Communications Electronic Warfare Test Instruments General Purpose High Power Switching Top View Ordering Information Part No. Description TGS2354SM 0.56 GHz 40 Watt GaN Switch 1097058 TGS2354SM Evaluation Board Data Sheet Rev. E, June 12, 2020 Subject to change without notice 1 of 9 www.qorvo.com TGS2354-SM 0.5 - 6 GHz 40 Watt GaN Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Frequency 0.5 6 GHz Control Voltage (V ) 50 V C Input Power Handling (CW) 46 dBm Control Current (I ) 1.0 / +1.0 mA C Control Voltage 40 V Power Dissipation (CW) 15 W Temperature Range -40 +25 +85 C RF Input Power (CW) 46.5 dBm Electrical specifications are measured at specified test conditions. Mounting Temperature (30 sec) 260 C Specifications are not guaranteed over all recommended operating conditions. Storage Temperature 55 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 0.5 6 GHz P CW Input Power 44 dBm 0.1dB Control Current (I ) 0.1 mA C On-State, 0.54 GHz 0.7 Insertion Loss dB On-State, 46 GHz 1.1 Input Return Loss Common Port Return Loss On-State 15 dB Output Return Loss Switched Port Return Loss 15 dB On-State Isolation Off-State 25 dB Output Return Loss Isolated Port Return Loss Off-State 2 dB Control Voltage 40 48 V Switching Speed 10-90% and 90-10%, Vc= 20V 50 ns Insertion Loss Temperature Coefficient 0.004 dB/ C Notes: 1. Test conditions unless otherwise noted: Temp= +25C. Z = 50 , Vc = 40 V 0 Thermal and Reliability Information Parameter Test Conditions Value Units (1,2) Thermal Resistance ( ) 4.75 C/W JC TBASE = 85 C, VC1 = 0 V, VC2 = 40 V, PIN = 40 W, (1,2) PDISS = 12 W Channel Temperature (T ) 142 C CH Notes: 1. Thermal resistance is determined from the channel to the back of the package (fixed 85 C temperature). 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Data Sheet Rev. E, June 12, 2020 Subject to change without notice 2 of 9 www.qorvo.com