May 2, 2008 High Power Ka-Band Absorptive SPDT Switch TGS4304 Key Features and Performance 32 - 40 GHz Frequency Range > 33 dBm Input P1dB V = +10V C On Chip Biasing Resistors On Chip DC Blocks < 1.0 dB Midband Insertion Loss < 4ns Switching Speed VPIN Technology Chip Dimensions: 1.58 x 1.10 x 0.10 mm (0.043 x 0.062 x 0.004 inches) Primary Applications Description Ka-Band Transmit / Receive The TriQuint TGS4304 is a GaAs Point-to-Point Radio absorptive single-pole, double-throw Point-to-Multipoint Radio (SPDT) PIN monolithic switch designed to operate over the Ka-Band frequency range. This switch maintains a low Measured Data insertion loss with high power handling of V = +5V, I 0mA, V = -4V, I = 30mA 33dBm or greater input P1dB at V = A A B B C +10V. These advantages, along with the 0.0 20 small size of the chip, make the -0.5 15 TGS4304 ideal for use in communication -1.0 10 and transmit/receive applications. -1.5 5 S21 -2.0 0 S11 -2.5 -5 S22 The TGS4304 is 100% DC & RF tested -3.0 -10 on-wafer to ensure performance -3.5 -15 compliance. -4.0 -20 -4.5 -25 -5.0 -30 Lead free and RoHS compliant. 32 33 34 35 36 37 38 39 40 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical test specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw tqs.com Web: www.triquint.com S21 (dB) S11,S22 (dB)May 2, 2008 TGS4304 TABLE I MAXIMUM RATINGS Symbol Parameter 1/ Value Notes V Control Voltage -5V to +25V 2/ C I Control Current 34 mA 2/ C P Input Continuous Wave Power 35 dBm IN 0 T Mounting Temperature (30 Seconds) 320 C M 0 T Storage Temperature -65 to 150 C STG / These ratings represent the maximum operable values for this device. 1 2/ V and I are per bias pad. C C 3/ Operation above 30dBm requires control voltages above +7.5V. TABLE II RF CHARACTERIZATION TABLE (T = 25 C, Nominal) A (V = +5V, I = 0mA, V = -4V, I = 30mA) A A B B Symbol Parameter Test Conditions Typ Units Notes F = 32 34 GHz 1.3 IL Insertion Loss F = 34 37 GHz 0.9 dB F = 37 40 GHz 1.3 RL Return Loss F = 32 40 GHz 10 dB V = +5 V 31 C Output Power V = +7.5 V 33 C P1dB 1dB Gain dBm 1/ Vc = +10 V 34 Compression V = +20 V 34.5 C Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured measurements. 1/ Frequency = 30GHz 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw tqs.com Web: www.triquint.com