TGS2355-SM 0.5-6 GHz 100 Watt GaN Switch Product Overview Qorvos TGS2355SM is a Single-Pole, DoubleThrow (SPDT) reflective switch fabricated on Qorvos QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355SM typically supports up to 100W input power (pulsed) handling at control voltages of 0/40 V. This switch maintains low insertion loss of 1.1 dB or less and greater than 40 dB isolation, making it ideal for high power switching 32 Pad 5x5 mm QFN Package applications across both defense and commercial platforms. Key Features The TGS2355SM is offered in a 5 x 5 mm air-cavity QFN Frequency Range: 0.56 GHz package comprised of an aluminum-nitride base with a LCP Insertion Loss: < 1.1 dB epoxy-sealed lid. This, along with the minimal DC power consumption, allows for easy system integration. Power Handling: 50 dBm (Pulsed) Isolation: 40 dB typical. Leadfree and RoHS compliant. Return Loss: > 15 dB Control Voltages: 0 V/40 V Switching Speed: < 50 ns Reflective Switch Package Dimensions: 5.0 x 5.0 x 1.45 mm Performance is typical across frequency. Please Functional Block Diagram reference electrical specification table and data plots for more details. J3, RF2 V C2 3 5 Applications Commercial and Military Radar 28, 29 Communications J1, RFC Electronic Warfare Test Instruments General Purpose High Power Switching 20 22 V C1 J2, RF1 Ordering Information Top View Part No. Description TGS2355SM 0.56 GHz 100 W GaN Switch 1097066 TGS2355SM Evaluation Board Data Sheet Rev. D, June 12, 2020 Subject to change without notice 1 of 10 www.qorvo.com TGS2355-SM 0.5-6 GHz 100 Watt GaN Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Control Voltage (V ) 50 V Frequency 0.5 6 GHz C Operating Temperature Range -40 +25 +85 Control Current (I ) 3.5 / +3.5 mA C C Input Power Handling (Pulsed) 50 dBm Power Dissipation 35 W Control Voltage 40 V RF Input Power (pulsed, 10% Duty Cycle, 50.5 dBm 20us pulse width) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating RF Input Power, CW, 50, T = 85C 47 dBm conditions. Mounting Temperature (30 sec) 260 C Storage Temperature 55 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 0.5 6 GHz P0.1dB Pulsed Input Power 50 dBm Control Current (IC) 1.0 mA Insertion Loss On-State, 0.54 GHz 0.7 dB On-State, 46 GHz 1.1 Input Return Loss On-State Common Port Return Loss 15 dB Output Return Loss On-State Switched Port Return Loss 15 dB Isolation Off-State 40 dB Output Return Loss Off-State (Isolated Port RL) 2.0 dB Switching Speed (10-90%, 90-10%, VC=-20V) 50 ns Third Order Intermodulation Distortion (FC=4 GHz) -46 dBc Second Harmonic Level (F0=4 GHz) -40 dBc Control Voltage -40 -48 V Insertion Loss Temperature Coefficient 0.004 dB/ C Notes: 1. Test conditions unless otherwise noted: Temp= +25C. Z0 = 50 , Vc = 40 V, parts mounted to EVB (page 6) Data Sheet Rev. D, June 12, 2020 Subject to change without notice 2 of 10 www.qorvo.com