TGS2353-2-SM 0.5 - 18 GHz High Power SPDT Reflective Switch Product Overview Qorvos TGS2353-2-SM is a single-pole, double-throw (SPDT) reflective switch packaged in a 4x4mm ceramic, air-cavity QFN. Fabricated on Qorvos QGaN25 0.25um GaN on SiC production process, the TGS2353-2-SM operates from 0.5- 18GHz and can switch up to 10W with low insertion loss and high isolation. QFN 4x4 mm 22L The TGS2353-2-SM performance allows it to be used in a variety of applications across commercial and military markets low and high power. Key Features SPDT, Reflective Lead-free and RoHS compliant Frequency Range: 0.5 to 18 GHz Input Power: up to 10 W Insertion Loss: <1.5 dB Isolation: 30 dB Typical Switching Speed: <35 ns Control Voltages: 0 V/40 V Functional Block Diagram Dimensions: 4.0 x 4.0 x 1.42 mm Performance is typical across frequency. Please Vc1 J2 - RF Out 1 reference electrical specification table and data plots 21 18 for more details. 3 J1 Applications RF In Commercial and Military Radar Communications Electronic Warfare 7 10 Test Instrumentation Vc2 J3 - RF Out 2 General Purpose Ordering Information Part No. Description 0.518 GHz High Power SPDT TGS2353-2SM Reflective Switch 1112206 TGS2353-2-SM Evaluation Board Data Sheet Rev. D, Sept. 08, 2021 Subject to change without notice 1 of 10 www.qorvo.com TGS2353-2-SM 0.5 to 18 GHz High Power SPDT Reflective Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Control Voltage (V ) 50 V V -40/0 V C C1 V 0/-40 V Control Current (I ) 1.5 / 6 mA C2 C I / I 0.25 to 0.1 mA C1 C2 Power Dissipation 3.5 W Temperature Range -40 +25 +85 C RF Input Power, CW, 50 , T = 25 C 41 dBm Electrical specifications are measured at specified test conditions. Mounting Temperature (30 sec) 260 C Specifications are not guaranteed over all recommended operating conditions. Storage Temperature 40 to 150 C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 0.5 18 GHz Input power CW 40 dBm Insertion Loss On-State <1.5 dB Input Return Loss Common Port On-State 15 dB Output Return Loss Switch Port On-State 15 dB Isolation Off-State 30 dB Output Return Loss Isolated Port Off-State 2 dB Insertion Loss Temperature Coefficient -0.004 dB/C Switching Speed On 31 ns 18 ns Switching Speed Off Notes: 1. Test conditions unless otherwise noted: Temp= +25C. V = 40/0 V, V = 0/40 V, see Function Table on page 6 C1 C2 Thermal and Reliability Information Parameter Test Conditions Value Units (1,2) Thermal Resistance ( ) 19.78 C/W JC T = 85 C, V = 0 V, V = -40 V, Freq. = 14 GHz, CW BASE C1 C2 (1,2) P = 40 dBm, P = 38 dBm, P = 3.69 W IN OUT DISS Channel Temperature (TCH) 158 C (1,2) Thermal Resistance ( ) 21.23 C/W JC T = 85 C, V = 0 V, V = -40 V, Freq. = 16 GHz, CW BASE C1 C2 (1,2) PIN = 39.5 dBm, POUT = 36.7 dBm, PDISS = 4.24 W Channel Temperature (T ) 175 C CH (1,2) Thermal Resistance (JC) 21.52 C/W T = 85 C, V = 0 V, V = -40 V, Freq. = 18 GHz, CW BASE C1 C2 (1,2) PIN = 39.5 dBm, POUT = 36.2 dBm, PDISS = 4.74 W Channel Temperature (TCH) 187 C Notes: 1. Measured to the back of the package. 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Data Sheet Rev. D, Sept. 08, 2021 Subject to change without notice 2 of 10 www.qorvo.com