TGS2354 0.5 6.0 GHz 40 Watt GaN Switch Product Description Qorvos TGS2354 is a Single-Pole, Double-Throw (SPDT) reflective switch fabricated on Qorvo s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2354 typically supports up to 40W input power handling at control voltages of 0/-40 V. This switch maintains low insertion loss of 0.8 dB or less, and greater than 25dB isolation making it ideal for high power switching applications across both defense and commercial platforms. The TGS2354 is available in a small 1.397 x 1.58 mm die size and allows control voltage input from either side of the Product Features die. This, along with the minimal DC power consumption, Frequency Range: 0.5 - 6 GHz allows for easy system integration. Insertion Loss: 0.8 dB Lead-free and RoHS compliant. Power Handling: 46 dBm (P0.1dB) Return Loss: > 15 dB Isolation: > 26 dB Control Voltages: 0 V/-40 V (from either side of the MMIC) Switching Speed: < 50 nS Reflective Switch Die Dimensions: 1.397 mm x 1.580 mm x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Block Diagram Applications Commercial and Military Radar Communications Electronic Warfare Test Instruments General Purpose High Power Switching Ordering Information Part No. Description TGS2354 0.5-6 GHz 40 Watt GaN Switch - 1 of 10 - Data Sheet Rev. B October 31, 2018 www.qorvo.com TGS2354 0.5 6.0 GHz 40 Watt GaN Switch Absolute Maximum Ratings Recommended Operating Conditions Parameter Value Parameter Min Typ Max Units Control Voltage (VC) -50 V Frequency 0.5 6 GHz Control Current (I ) -1.0 / +1.0 mA Input Power Handling C 46 dBm (CW) Power Dissipation (CW) 15 W Control Voltage -40 V RF Input Power (CW) 46.5 dBm Temperature Range -40 25 +85 C Mounting Temperature (30 sec) 320 C Electrical specifications are measured at specified test Storage Temperature -55 to 150 C conditions. Specifications are not guaranteed over all Operation of this device outside the parameter ranges recommended operating conditions. given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: T = 25 C, V =-40V, CW Input Power BASE C Parameter Conditions Min Typical Max Units Operational Frequency Range 0.5 6.0 GHz P-0.1dB CW Input Power 46 dBm Control Current (I ) 0.1 mA C On-State, 0.5-4 GHz < 0.5 Insertion Loss dB On-State, 4-8 GHz < 0.8 Input Return Loss Common Port RL On-State > 15 dB Output Return Loss Switched Port RL On-State > 15 dB Isolation Off-State > 26 dB Output Return Loss Isolated Port RL Off-State 2.3 dB Third Order IM Distortion < -48 dBc Switching Speed 10%-90, 90-10%, V =-20V < 50 nS C Control Voltage -40 -48 V Insertion Loss Temperature Coefficient 0.003 dB/ C Thermal and Reliability Information Parameter Test Conditions Value Units (1,2) Thermal Resistance ( ) T = 85C, V = 0 V, V = -40 V, 5.33 C/W JC BASE C1 C2 (1,2) PIN = 40 W, PDISS = 12 W Channel Temperature (TCH) 149 C 1. MMIC soldered to 40 mil thick Cu-Mo carrier plate using AuSn solder. Thermal resistance is determined from the channel to the back of the carrier plate (fixed 85 C temp.). 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates - 2 of 10 - Data Sheet Rev. B October 31, 2018 www.qorvo.com