NOT RECOMMENDED FOR NEW DESIGNS TQF6297H B7/B30/B38/B40/B41N Front-End Module (FEM) RFMD + TriQuint = Qorvo Functional Block Diagram Applications TD-LTE Smartphones, Tablets and Handsets Datacards 20 19 18 17 16 15 14 13 V GND CC1 V 21 12 B40 TRx BATT Product Features NC 22 11 GND Single Device for FDD-LTE and TD-LTE Bands RFIN 23 10 TRx1 Module Contains Band 40 and Band 41N Filters MIPI B41N Meets China Market Requirements V 24 9 B41N TRx IO LTE Bands and Output Power SDATA GND 1 2 3 4 5 6 7 8 7 (25002570 MHz) +27.5 dBm 30 (2305 2315 MHz) +27.5 dBm 38 (25702620 MHz) +27.5 dBm 40 (23002400 MHz) +25.0 dBm 41N (25552655 MHz) +25.0 dBm High Efficiency 4.0 x 3.0 mm, 24-pin Module Pin Configuration Pin No. Label 1 SDATA General Description 2 SCLK The TQF6297H front-end power amplifier module merges 6 B38/41N Rx TriQuints HBT power amplifier, CuFlip, and BAW filter 7 B40 Rx technologies into one product. This increases module 9 B41N TRx circuit integration which yields an ultra-compact package. The small size and integration allows phone board 10 TRx1 designer to take one step closer to a small RF solution. 12 B40 TRx 14 Tx1 The UHB LTE modules primary bands are Band 40 and 18 VCC2 Band 41N, while Band 7, Band 30, and Band 38 are auxiliary bands. Band 40 and Band 41N filters meet tough 20 V CC1 WiFi co-exist specification requirements. Band 21 VBATT 38/40/41N Rx is passed through a cross-point switch to 23 RFIN (B7/B30/B38/B40/B41N ) reduce the number of filters required for TD-LTE 24 V solutions. IO 16,22 NC 3,4,5,8,11,13,15,17,19 GND Backside Pad GND Key Performance Specifications Ordering Information Parameter B7 B38 B40 B41N Units Gain HPM 29 29 26.5 26.5 dB Part No. Description TQF6297H B7//30/38/40/41 Front-End Module (FEM) Output Power +27.5 +27.5 +25.0 +25.0 dBm Current (Pmax) 480 480 450 500 mA Standard T/R size = 5000 pieces on a 13 reel. Preliminary Datasheet: Rev. H 2020-03-24 Disclaimer: Subject to change without notice - 1 of 24 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com SCLK GND GND V CC2 GND GND GND NC B38/41N Rx GND B40 Rx Tx1NOT RECOMMENDED FOR NEW DESIGNS TQF6297H B7/B30/B38/B40/B41N Front-End Module (FEM) RFMD + TriQuint = Qorvo Recommended Operating Conditions Absolute Maximum Ratings Parameter Min Typ Max Units Parameter Rating V +3.0 +3.5 +4.6 V BATT Storage Temperature 40 to +150C VCC1, VCC2 +0.8 +3.4 +4.6 V RF Input Power, CW, 50 , T = 25C +15 dBm Interface Supply Voltage VIO +1.65 +1.8 +1.95 V Supply Voltage, V , V 1.0V to +6V CC1 CC2 Logic Low 0 0 0.2*VIO V Battery Voltage, VBATT 1.0V to +6V Logic High 0.8*VIO +1.8 +1.95 V Digital Control Voltage (MIPI) 0.5 to +2.2V Case Temperature 20 +85 C Operation of this device outside the parameter ranges given above or with multiple absolute maximum ratings Electrical specifications are measured at specified test conditions. applied simultaneously may cause permanent damage. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications: Band 7 Test conditions unless otherwise noted: V = V = +3.4V, V =+3.4, P = min., Temp = 25C, Z =Z =50, CC1 CC2 BATT MAX S L LTE modulation = QPSK, 10M12RB Parameter Conditions Min Typ Max Units P QPSK, 10M12RB +27.5 +28.5 dBm MAX HPM Gain 29 dB HPM Gain over Temp -20C to 85C, Vcc = 3.0V to 4.6V 25.75 31 LPM Gain POUT+16dBm 22.7 dB LPM Gain over Temp P +16dBm, -20C to 85C 20.5 25 OUT Gain Linearity 0 POUT+16dBm LPM / 27.5dBm HPM -1 +/-0.5 1 dB EUTRA ACLR P P 37 34 dBc OUT MAX UTRA ACLR1 POUTPMAX 38 35 dBc UTRA ACLR2 POUTPMAX 42 41 dBc EVM P P all modulations 3 5 % OUT MAX , Current at Pmax Vcc = 3.4V, Ibatt + ICC1 + ICC2 495 550 mA Current at +16dBm Ibatt + I + I 150 185 mA CC1 CC2 Current at 0dBm Ibatt + ICC1 + ICC2 35 mA LPM Ibatt + ICC1 + ICC2, no RF 45 70 105 mA Quiescent current IcQ HPM Ibatt + I + I , no RF 75 120 145 mA CC1 CC2 Phase shift at 16dBm when switching Phase Variation 30 deg from HPM to LPM Rx Band Gain 2620 2690 MHz 29 31 dB RX Band Noise Power 20MHz FRB -130 126 dBm/Hz Ch1 Ch6, 20MHz FRB -125 -120 ISM Band Noise Power Ch11-Ch12, 20MHz FRB -107 -105 dBm/Hz Ch13, 20MHz FRB -102 -98 GPS Band Noise Power 1563 1587MHz, 20MHz FRB -147 140 dBm/Hz GLONASS Band Noise Power 1593 1606 MHz, 20 MHz FRB -147 -140 dBm/Hz BeiDou Band Noise Power 1559 1591 MHz, 20MHz FRB -147 -140 dBm/Hz 2nd Harmonic Power Pout P -22 15 dBm max 3rd Harmonic Power Pout P -40 20 dBm max Input VSWR 2.3:1 3:1 Preliminary Datasheet: Rev. H 2020-03-24 Disclaimer: Subject to change without notice - 2 of 24 - 2015 TriQuint Semiconductor, Inc www.triquint.com / www.qorvo.com