TQM679002A Data Sheet 802.11b/g/n WLAN/BT Front-End Module Features Block Diagram Fully Integrated, 802.11b/g/n + BT front-end module Internally matched input/output RxRxpp Integrated directional detector BaBaBallluuunnn RxRxnn Temperature Compensated Bias ANANTT PAPABBCC Network PAPAEENN Single battery voltage of 2.3V-5.5V TxTx i inn PAPAPA Leadless 3.0 x 3.0 x 0.45 mm SMT Pb-Free DiDiDirrreeeccctttiiiooonnnaaalll Pout = 20.5dBm 802.11b and DeDeDettteeeccctttororor PdPdeteteecctt 16dBm OFDM 64QAM at 3% EVM BTBTHH Applications Product Description IEEE802.11b/g/n WLAN/BT Applications The TQM679002A is full WLAN/BT front-end module in an ultra Single-Chip RF Front-end Module small 3mm x 3mm footprint package for 802.11b/g/n and Wireless LAN Systems Bluetooth applications. The TQM679002A contains 2.4GHz PA, Portable Battery-Powered Equipment directional detector, front-end switch, Bluetooth path and receive balun. The architecture and interface are optimized for Package Style next generation WLAN integration into handset devices. The front-end module features CMOS compatible control voltages 3.0x3.0x0.45mm ETSLP Plastic Package to facilitate ease of use. With its low power dissipation, the front-end Module contributes to the extended battery life of next generation WLAN solutions. The front-end module is manufactured in TriQuints high-reliability E/D pHEMT technology and is assembled in thin profile 3mm x 3mm x 0.45mm ETSLP - 16 Pb-Free package. Electrical Specifications Parameter Min Typ Max Units Frequency 2400 2500 MHz Pout, 802.11g, 64QAM 17 dBm EVM 3.5 % Current, 802.11g, Pout=15.5dBm 113 mA Note 1: 3.6V supply, +25 C Data Sheet: Subject to change without notice 1 For additional information and latest specifications, see our website: www.triquint.com Revision C, April 8, 2010 BTBTSWSW RXRXSWSW TXTXSWSW TQM679002A Data Sheet 802.11b/g/n WLAN/BT Front-End Module Absolute Maximum Ratings Symbol Parameter Absolute Maximum Value Units V V V Power Supply Voltage, no RF Applied -0.5 to 6.0 VDC B1, B2, B3 PINPUT Maximum TX Input Power 10 dBm P Power Dissipation 3 W DISS TC Case Temperature, Survival -40 to +100 C T Storage Temperature -40 to +150 C STG Note: The part may not survive all maximums applied simultaneously. General Characteristics (Supply Voltage, Leakage Currents, Ambient Temp. ESD, etc) Symbol Parameter Min Typ/Nom Max Units V V V Supply Voltage 2.3 3.6 4.8 VDC B1, B2, B3 VB1, VB2, VB3 Supply Voltage (Maximum Operating Condition) 5.5 VDC V V V Supply voltage ripple with no degradation 500 mVp-p B1, B2, B3 VB1, VB2, VB3 Supply voltage ripple with degraded performance 900 mVp-p I Leakage current single-band (T < 25C) 30 uA LKG TAMB Ambient Temperature (Degraded Performance) -40 -30 C T Ambient Temperature (No Degradation) -30 +75 C AMB TAMB Ambient Temperature (Degraded Performance) +75 +85 C ESD Human Body Model (HBM) all pins (EIA/JESD22-A114) JEDEC Class 1B HBM ESDCDM Charge Device Model (CDM) all pins (EIA/JESD22-C101) JEDEC Class IV VIH Digital control lines HIGH 1.58 2.0 V VIL Digital control lines LOW 0.0 0.01 V Data Sheet: Subject to change without notice 2 For additional information and latest specifications, see our website: www.triquint.com Revision C, April 8, 2010