TQP200002 Dual ESD Diode Product Overview The TQP200002 ESD protection device is fabricated in GaAs MESFET technology and has been especially developed for high frequency applications. It delivers bi-directional protection with very low leakage currents and extremely low capacitance. It is ideally suited for cellular handsets, cordless phones, and broadband applications like CATV set top boxes and LNBs. 1.2mm x 1.5mm SMT Functional Block Diagram Key Features Snap-Back ESD protection Low clamp voltages 15 or 30V Low trigger voltages 18, 25, or 41V Two bidirectional protection lines Fast response time: under 1ns Low capacitance: 0.22pF 2 Thin Small Leadless SMT Package (A=1.8 mm ) Applications Snap Back Characteristics Cellular Handsets Cordless Phone LNBs CATV set top boxes Ordering Information Part Number Description TQP200002 13-inch reel with 10,000 pieces TQP200002SR 7-inch reel with 100 pieces Data Sheet Rev H, August 12, 2019 Subject to change without notice - 1 of 10 - www.qorvo.com TQP200002 Dual ESD Diode Absolute Maximum Ratings Parameter Rating Supply Voltage (V ) +25V DD Total Power Dissipation +600mW IEC 61000-4-2 Air Discharge +3000V IEC 61000-4-2 Contact Discharge +3000V JEDEC Human Body Model (HBM) +8000V Storage Temperature Range 65 to +150C Operating Temperature Range -40 to +85C 6 Maximum Junction Temperature (for >10 hours MTTF) +160C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Condition Min Typ Max Unit Supply Voltage (V ) -7 +7 V D13 Supply Voltage (V ) -7 +7 V D12 Supply Voltage (V ) -17 +17 V D23 Trigger Voltage (V ) P1, 3 +13 +18 +23 V 1 Clamp Voltage (V ) P1, 3 +10 +15 +20 V C11 Leakage Current (I ) 1V +20 nA leak1 Leakage Current (I ) 15V +500 nA leak1 Capacitance (C ) 1V, 10MHz +290 fF 1 Trigger Voltage (V ) P1, 2 +20 +25 +30 V 2 Clamp Voltage (VC ) P1, 2 +10 +15 +20 V 12 Leakage Current (I ) 1V +20 nA leak2 Leakage Current (I ) 15V +500 nA leak2 Capacitance (C ) 1V, 10MHz +290 fF 2 Trigger Voltage (V ) P2, 3 +31 +41 +46 V 3 Clamp Voltage (VC ) P2, 3 +20 +30 +40 V 13 Leakage Current (I ) 1V +15 nA leak3 Leakage Current (I ) 15V +300 nA leak3 Capacitance (C ) 1V, 10MHz +220 fF 3 Notes: 1. Typical performance at these conditions: Temp = +25C, 75 system Data Sheet Rev H, August 12, 2019 Subject to change without notice - 2 of 10 - www.qorvo.com