TQP770001 Preliminary Data Sheet Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant) Features Functional Block Diagram InGaP HBT Technology Bluetooth v2.0 class 1 systems High Efficiency: 50% 21.5dBm EDR (Enhanced Data Rate) Compliant Under EDR modulation, its low AM-AM and AM-PM distortion guarantee high modulation accuracy Will operate under Bluetooth FSK, 8DPSK, and Pi/4-DQPSK modulations Optimized for 50 ohm System Product Description The TQP770001 Bluetooth PA is designed on TriQuints advanced InGaP HBT Integrated bias controller with a power GaAs technology offering state of the art reliability, temperature stability and control (variable gain) function ruggedness. The PA is a two-stage design requiring several SMD tuning elements for input and output matching, gain shaping, and bias injection. Small 12-pin QFN, 2x2mm module Features include an integrated bias controller with a power control (variable gain) function. The bias controller also acts to provide temperature compensation. The Lead-free 260C RoHS Compliant PA is housed in a 2.0 mm x 2.0 mm 12 pin STSLP package with a grounded back paddle. A recommended drawing is provided in section 4.3.2. This PA is Full ESD Protection designed to operate in Bluetooth v2.0 class 1 systems. It is also intended to be Enhanced Data Rate (EDR) compliant with Bluetooth v2.0 + EDR specification for both 2 Mbps and 3 Mbps modulation modes. Applications Bluetooth v2.0 + EDR class 1 systems Electrical Specifications Package Style Conditions: Vcc = 3.3 V, T = 25C Parameter Min Typ Max Units Frequency 2.4 2.5 GHz RF transmit power Vctrl=3.3V 19.5 21.0 - dBm Gain Pin= -10 dBm 25.0 27.0 - dB PAE 21.5dBm 50 % 12-Pin 2.0x2.0x0.6mm STSLP Package Bottom View 1 Preliminary Data Sheet: Subject to change without notice For additional information and latest specifications, see our website: www.triquint.com Revision B, Sept. 18, 2006 TQP770001 Preliminary Data Sheet Bluetooth Two Stage (HBT) Power Amplifier (EDR Compliant) 1 Absolute Maximum Ratings Parameter Symbol Min. Typ/Nom Max. Units Power Supply Voltage VCC 6 V - - Power Supply Voltage VCC, RF Applied 5 V - - Bias and reference Voltage PA ON (PA On = Ven = Venable) 5 V - - Bias power control voltage P C (Vctrl = P CTRL) 5 V - - DC Supply current ICC 250 mA - - Storage Temperature TSTORAGE 85 C -40 - Operating Case Temperature TC 85 C -5 - Maximum input power PI 5 dBm - - Recommended Operating Conditions Parameter Symbol Min. Typ/Nom Max. Units Supply Voltage V 3.0 3.3 3.6 Volts CC Reference Voltage PA ON (Ven) Volts PA On 3.0 3.3 3.60 PA Off 0 - 0.4 Bias power control voltage P CTRL (Vctrl) 0.0 Vcc Volts Case Operating Temperature T -40 25 +85 C CASE Note 1: No damage assuming only one parameter is set at a time with all other parameters set at or below nominal value. 2 Preliminary Data Sheet: Subject to change without notice For additional information and latest specifications, see our website: www.triquint.com Revision B, Sept. 18, 2006