X-On Electronics has gained recognition as a prominent supplier of 2SK1152L-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK1152L-E MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SK1152L-E Renesas

2SK1152L-E electronic component of Renesas
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See Product Specifications
Part No.2SK1152L-E
Manufacturer: Renesas
Category: MOSFETs
Description: Trans MOSFET N-CH 500V 1.5A 3-Pin(3+Tab) DPAK(L)-(1) Box
Datasheet: 2SK1152L-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 1.829 ea
Line Total: USD 18.29 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 10
Multiples : 1
10 : USD 1.829
50 : USD 1.4457
100 : USD 1.2676
200 : USD 1.118

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Gate-Source Voltage Max
Drain-Source On-Res
Operating Temp Range
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the 2SK1152L-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK1152L-E and other electronic components in the MOSFETs category and beyond.

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Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ0300 2SK1152(L), 2SK1152(S) (Previous: REJ03G0907-0200) Rev.3.00 Silicon N Channel MOS FET May 16, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(L)-(1)) (Package name: DPAK(S)) 4 D 4 G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage 2SK1151 450 V V DSS 2SK1152 500 Gate to source voltage V 30 V GSS Drain current I 1.5 A D 1 Drain peak current I * 6 A D(pulse) Body to drain diode reverse drain current I 1.5 A DR 2 Channel dissipation Pch* 20 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at T = 25C C R07DS0397EJ0300 Rev.3.00 Page 1 of 6 May 16, 2011 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown 2SK1151 450 V V I = 10 mA, V = 0 (BR)DSS D GS voltage 2SK1152 500 Gate to source breakdown voltage V 30 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I 10 A V = 25 V, V = 0 GSS GS DS Zero gate voltage drain 2SK1151 VI 100 A = 360 V, V = 0 DSS DS GS current 2SK1152 V = 400 V, V = 0 DS GS Gate to source cutoff voltage V 2.0 3.0 V I = 1 mA, V = 10 V GS(off) D DS 3 Static drain to source on 2SK1151 R 3.5 5.5 I = 1 A, V = 10 V * DS(on) D GS state resistance 2SK1152 4.0 6.0 3 Forward transfer admittance y 0.6 1.1 S I = 1 A, V = 20 V * fs D DS Input capacitance Ciss 160 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 45 pF Reverse transfer capacitance Crss 5 pF Turn-on delay time t 5 ns I = 1 A, V = 10 V, d(on) D GS R = 30 L Rise time t 10 ns r Turn-off delay time t 20 ns d(off) Fall time t 10 ns f Body to drain diode forward voltage V 1.0 V I = 1.5 A, V = 0 DF F GS Body to drain diode reverse recovery t 220 ns I = 1.5 A, V = 0, rr F GS time di /dt = 100 A/ s F Note: 3. Pulse test R07DS0397EJ0300 Rev.3.00 Page 2 of 6 May 16, 2011

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Intersil(Renes as Electronics)
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