Preliminary Datasheet 2SK1151(L), 2SK1151(S), R07DS0397EJ0300 2SK1152(L), 2SK1152(S) (Previous: REJ03G0907-0200) Rev.3.00 Silicon N Channel MOS FET May 16, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(L)-(1)) (Package name: DPAK(S)) 4 D 4 G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage 2SK1151 450 V V DSS 2SK1152 500 Gate to source voltage V 30 V GSS Drain current I 1.5 A D 1 Drain peak current I * 6 A D(pulse) Body to drain diode reverse drain current I 1.5 A DR 2 Channel dissipation Pch* 20 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at T = 25C C R07DS0397EJ0300 Rev.3.00 Page 1 of 6 May 16, 2011 2SK1151(L), 2SK1151(S), 2SK1152(L), 2SK1152(S) Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown 2SK1151 450 V V I = 10 mA, V = 0 (BR)DSS D GS voltage 2SK1152 500 Gate to source breakdown voltage V 30 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I 10 A V = 25 V, V = 0 GSS GS DS Zero gate voltage drain 2SK1151 VI 100 A = 360 V, V = 0 DSS DS GS current 2SK1152 V = 400 V, V = 0 DS GS Gate to source cutoff voltage V 2.0 3.0 V I = 1 mA, V = 10 V GS(off) D DS 3 Static drain to source on 2SK1151 R 3.5 5.5 I = 1 A, V = 10 V * DS(on) D GS state resistance 2SK1152 4.0 6.0 3 Forward transfer admittance y 0.6 1.1 S I = 1 A, V = 20 V * fs D DS Input capacitance Ciss 160 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 45 pF Reverse transfer capacitance Crss 5 pF Turn-on delay time t 5 ns I = 1 A, V = 10 V, d(on) D GS R = 30 L Rise time t 10 ns r Turn-off delay time t 20 ns d(off) Fall time t 10 ns f Body to drain diode forward voltage V 1.0 V I = 1.5 A, V = 0 DF F GS Body to drain diode reverse recovery t 220 ns I = 1.5 A, V = 0, rr F GS time di /dt = 100 A/ s F Note: 3. Pulse test R07DS0397EJ0300 Rev.3.00 Page 2 of 6 May 16, 2011